MFG:STMicroelectronics Category:Discrete Semiconductor Products Package Cooled:TO-220 D/C:5+
STP12NM50, STP12NM50FD, STP12NM50FDFP Datasheet download
Category: Discrete Semiconductor Products
MFG: STMicroelectronics
Package Cooled: TO-220
D/C: 5+
Description: MOSFET N-CH 500V 12A TO-220
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PDF/DataSheet Download
Datasheet: STP12NM50
File Size: 415106 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: STP12NM50FD
File Size: 665420 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: STP12NM50FDFP
File Size: 665420 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
| Technical/Catalog Information | STP12NM50 |
| Vendor | STMicroelectronics |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 500V |
| Current - Continuous Drain (Id) @ 25° C | 12A |
| Rds On (Max) @ Id, Vgs | 350 mOhm @ 6A, 10V |
| Input Capacitance (Ciss) @ Vds | 1000pF @ 25V |
| Power - Max | 160W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 39nC @ 10V |
| Package / Case | TO-220-3 (Straight Leads) |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | STP12NM50 STP12NM50 497 2666 5 ND 49726665ND 497-2666-5 |
The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company's PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company's proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition's products.
| Symbol | Parameter |
Value |
Unit | |
|
STB12NM50 STB12NM50 STP12NM50 |
STP12NM50FP | |||
| VGS | Gate- source Voltage |
± 30 |
V | |
| ID | Drain Current (continuos) at TC = 25 |
12 |
12(*) |
A |
| ID | Drain Current (continuos) at TC = 100 |
7.5 |
7.5(*) |
A |
| IDM() | Drain Current (pulsed) |
48 |
48(*) |
A |
| PTOT | Total Dissipation at TC = 25 |
160 |
35 |
W |
| Derating Factor |
1.28 |
0.28 |
W/ | |
| VISO | Insulation Withstand Voltage (DC) |
- |
2500 |
V |
| dv/dt (1) | Peak Diode Recovery voltage slope |
15 |
V/ns | |
| Tj Tstg |
Operating Junction Temperature Storage Temperature |
-65 to 150 -65 to 150 |
| |
The MDmesh™ family is very suitable for increasing power density of high voltage converters allowing system miniaturization and higher efficiencies.
The FDmesh™ associates all advantages of reduced on-resistance and fast switching with an intrinsic fast-recovery body diode. It is therefore strongly recommended for bridge topologies, in particular ZVS phase-shift converters.
| Symbol | Parameter |
Value |
Unit | ||
| TO-220/ D2PAK/I2PAK |
TO-220FP |
TO-247 | |||
| VDS | Drain-source Voltage (VGS = 0) |
500 |
V | ||
| VDGR | Drain-gate Voltage (RGS = 20 k) |
500 |
V | ||
| VGS | Gate- source Voltage |
± 30 |
V | ||
| ID | Drain Current (continuos) at TC = 25 |
12 |
12(*) |
14 |
A |
| ID | Drain Current (continuos) at TC = 100 |
7.5 |
7.5(*) |
8.8 |
A |
| IDM() | Drain Current (pulsed) |
48 |
48(*) |
56 |
A |
| PTOT | Total Dissipation at TC = 25 |
160 |
35 |
175 |
W |
| Derating Factor |
1.28 |
0.28 |
1.4 |
W/ | |
| dv/dt (1) | Peak Diode Recovery voltage slope |
20 |
V/ns | ||
| VISO | Insulation Withstand Voltage (DC) |
- |
2500 |
-
|
V |
| Tj Tstg |
Operating Junction Temperature Storage Temperature |
- 65 to 150 - 65 to 150 |
| ||
The FDmesh™ associates all advantages of reduced on-resistance and fast switching with an intrinsic fast-recovery body diode. It is therefore strongly recommended for bridge topologies, in particular ZVS phase-shift converters.
| Symbol | Parameter |
Value |
Unit | ||
| TO-220/ D2PAK/I2PAK |
TO-220FP |
TO-247 | |||
| VDS | Drain-source Voltage (VGS = 0) |
500 |
V | ||
| VDGR | Drain-gate Voltage (RGS = 20 k) |
500 |
V | ||
| VGS | Gate- source Voltage |
± 30 |
V | ||
| ID | Drain Current (continuos) at TC = 25 |
12 |
12(*) |
14 |
A |
| ID | Drain Current (continuos) at TC = 100 |
7.5 |
7.5(*) |
8.8 |
A |
| IDM() | Drain Current (pulsed) |
48 |
48(*) |
56 |
A |
| PTOT | Total Dissipation at TC = 25 |
160 |
35 |
175 |
W |
| Derating Factor |
1.28 |
0.28 |
1.4 |
W/ | |
| dv/dt (1) | Peak Diode Recovery voltage slope |
20 |
V/ns | ||
| VISO | Insulation Withstand Voltage (DC) |
- |
2500 |
-
|
V |
| Tj Tstg |
Operating Junction Temperature Storage Temperature |
- 65 to 150 - 65 to 150 |
| ||
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