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STP14NF06FP, STP14NF06L, STP14NF10

STP14NF06FP, STP14NF06L, STP14NF10 Selling Leads, Datasheet

MFG:ST  Package Cooled:TO-220FP  D/C:08+

STP14NF06FP, STP14NF06L, STP14NF10 Picture

STP14NF06FP, STP14NF06L, STP14NF10 Datasheet download

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Part Number: STP14NF06FP

 

MFG: ST

Package Cooled: TO-220FP

D/C: 08+

 

 

 
 
 
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  • STP02

  • Vendor: SAMSUNG Pack: QFP D/C: 06+& Qty: 100 Note: New original stock  Adddate: 2026-07-09
  • Inquire Now
  • SHENZHEN SHI KEN ELECTRONICS   China
    Contact: Mr.lin   MSN:skyline.dk@msn.com
    Tel: 86-755-83030307
    Fax: 86-755-83030408
    (6)

About STP04CM596B1R

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Datasheet: STP04CM596B1R

File Size: 412025 KB

Manufacturer: STMicroelectronics

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STP14NF06L Suppliers

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  • STP02

  • Vendor: SAMSUNG Pack: QFP D/C: 06+& Qty: 100 Note: New original stock  Adddate: 2026-07-09
  • Inquire Now
  • SHENZHEN SHI KEN ELECTRONICS   China
    Contact: Mr.lin   MSN:skyline.dk@msn.com
    Tel: 86-755-83030307
    Fax: 86-755-83030408
    (6)

About STP04CM596B1R

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Datasheet: STP04CM596B1R

File Size: 412025 KB

Manufacturer: STMicroelectronics

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STP14NF10 Suppliers

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  • STP02

  • Vendor: SAMSUNG Pack: QFP D/C: 06+& Qty: 100 Note: New original stock  Adddate: 2026-07-09
  • Inquire Now
  • SHENZHEN SHI KEN ELECTRONICS   China
    Contact: Mr.lin   MSN:skyline.dk@msn.com
    Tel: 86-755-83030307
    Fax: 86-755-83030408
    (6)

About STP14NF10

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Datasheet: STP14NF10

File Size: 253618 KB

Manufacturer: STMICROELECTRONICS [STMicroelectronics]

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STP14NF10 General Description

This MOSFET series realized with STMicroelectronics unique STripFET™ process has specifically been designed to minimize input capacitance and gate charge. It
is therefore suitable as primary switch in advanced highefficiency, high-frequency isolated DC-DC converters for Telecom and Computer applications. It is also intended for any applications with low gate drive requirements.

STP14NF10 Maximum Ratings

Symbol
Parameter
Value
Unit
STP10NK80Z
STP10NK80ZFP
VDS
Drain-source Voltage (VGS = 0)
100
V
VDGR
Drain- gate Voltage (RGS = 20 k)
100
V
VGS
Gate-Source Voltage
± 20
V
ID
Drain Current (continuous) at Tc = 25
15
10
A
ID

Drain Current (continuous) at Tc = 100
1.4
6.3
A
IDM(`)
Drain Current (pulsed)
60
40
A
PTOT
Total Dissipation at Tc = 25
60
25
W
Derating Factor
0.4
0.17
W/
dv/dt (1)
Peak Diode Recovery voltage slope
9
V/ns
EAS (2)
Single Pulse Avalanche Energy
70
MJ
VISO
Insulation Withstand Voltage (DC)
2000
V
Tstg
Storage Temperature
-55 to 175

Tj
Max. Operating Junction Temperature
(•)Pulse width limited by safe operating area (1)ISD14A, di/dt300A/µs, VDD(BR)DSS, Tj TJMAX
(2) Starting Tj = 25 oC, ID = 15A, VDD= 50V

STP14NF10 Typical Application

HIGH-EFFICIENCY DC-DC CONVERTERS
UPS AND MOTOR CONTROL

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