MFG:STMicroelectronics Category:Discrete Semiconductor Products Package Cooled:05+ D/C:TO-
STP14NF10FP, STP14NF12, STP14NF12FP Datasheet download
Category: Discrete Semiconductor Products
MFG: STMicroelectronics
Package Cooled: 05+
D/C: TO-
Description: MOSFET N-CH 120V 8.5A TO-220FP
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PDF/DataSheet Download
Datasheet: STP14NF10FP
File Size: 475493 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: STP14NF12
File Size: 354086 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: STP14NF12FP
File Size: 354086 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
This MOSFET series realized with STMicroelectronics unique STripFET™ process has specifically been designed to minimize input capacitance and gate charge. It
is therefore suitable as primary switch in advanced highefficiency, high-frequency isolated DC-DC converters for Telecom and Computer applications. It is also intended for any applications with low gate drive requirements.
|
Symbol |
Parameter |
Value |
Unit | |
|
STP10NK80Z |
STP10NK80ZFP |
|||
|
VDS |
Drain-source Voltage (VGS = 0) |
100 |
V | |
|
VDGR |
Drain- gate Voltage (RGS = 20 k) |
100 |
V | |
|
VGS |
Gate-Source Voltage |
± 20 |
V | |
|
ID |
Drain Current (continuous) at Tc = 25 |
15 |
10 |
A |
|
ID |
Drain Current (continuous) at Tc = 100 |
1.4 |
6.3 |
A |
|
IDM(`) |
Drain Current (pulsed) |
60 |
40 |
A |
|
PTOT |
Total Dissipation at Tc = 25 |
60 |
25 |
W |
|
Derating Factor |
0.4 |
0.17 |
W/ | |
|
dv/dt (1) |
Peak Diode Recovery voltage slope |
9 |
V/ns | |
|
EAS (2) |
Single Pulse Avalanche Energy |
70 |
MJ | |
|
VISO |
Insulation Withstand Voltage (DC) |
2000 |
V | |
|
Tstg |
Storage Temperature |
-55 to 175
|
| |
|
Tj |
Max. Operating Junction Temperature | |||
| Technical/Catalog Information | STP14NF12 |
| Vendor | STMicroelectronics |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 120V |
| Current - Continuous Drain (Id) @ 25° C | 14A |
| Rds On (Max) @ Id, Vgs | 180 mOhm @ 7A, 10V |
| Input Capacitance (Ciss) @ Vds | 460pF @ 25V |
| Power - Max | 60W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 21nC @ 10V |
| Package / Case | TO-220 |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | STP14NF12 STP14NF12 |
This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency isolated DC-DC converters for Telecom and Computer application. It is also intended for any application with low gate charge drive requirements
|
Symbol |
Parameter |
Value |
Unit | |
|
STP10NK80Z |
STP10NK80ZFP |
|||
|
VDS |
Drain-source Voltage (VGS = 0) |
120 |
V | |
|
VDGR |
Drain- gate Voltage (RGS = 20 k) |
120 |
V | |
|
VGS |
Gate-Source Voltage |
±20 |
V | |
|
ID |
Drain Current (continuous) at Tc = 25 |
14 |
8.5 |
A |
|
ID |
Drain Current (continuous) at Tc = 100 |
9 |
6 |
A |
|
IDM(`) |
Drain Current (pulsed) |
56 |
34 |
A |
|
PTOT |
Total Dissipation at Tc = 25 |
60 |
25 |
W |
|
Derating Factor |
0.4 |
0.17 |
W/ | |
|
dv/dt (1) |
Peak Diode Recovery voltage slope |
9 |
V/ns | |
|
EAS (2) |
Single Pulse Avalanche Energy |
60 |
MJ | |
|
VISO |
Insulation Withstand Voltage (DC) |
2500 |
V | |
|
Tstg |
Storage Temperature |
-55 to 175
|
| |
|
Tj |
Max. Operating Junction Temperature | |||
| Technical/Catalog Information | STP14NF12FP |
| Vendor | STMicroelectronics |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 120V |
| Current - Continuous Drain (Id) @ 25° C | 8.5A |
| Rds On (Max) @ Id, Vgs | 180 mOhm @ 7A, 10V |
| Input Capacitance (Ciss) @ Vds | 460pF @ 25V |
| Power - Max | 25W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 21nC @ 10V |
| Package / Case | TO-220FP |
| FET Feature | Logic Level Gate |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | STP14NF12FP STP14NF12FP |
This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency isolated DC-DC converters for Telecom and Computer application. It is also intended for any application with low gate charge drive requirements
|
Symbol |
Parameter |
Value |
Unit | |
|
STP10NK80Z |
STP10NK80ZFP |
|||
|
VDS |
Drain-source Voltage (VGS = 0) |
120 |
V | |
|
VDGR |
Drain- gate Voltage (RGS = 20 k) |
120 |
V | |
|
VGS |
Gate-Source Voltage |
±20 |
V | |
|
ID |
Drain Current (continuous) at Tc = 25 |
14 |
8.5 |
A |
|
ID |
Drain Current (continuous) at Tc = 100 |
9 |
6 |
A |
|
IDM(`) |
Drain Current (pulsed) |
56 |
34 |
A |
|
PTOT |
Total Dissipation at Tc = 25 |
60 |
25 |
W |
|
Derating Factor |
0.4 |
0.17 |
W/ | |
|
dv/dt (1) |
Peak Diode Recovery voltage slope |
9 |
V/ns | |
|
EAS (2) |
Single Pulse Avalanche Energy |
60 |
MJ | |
|
VISO |
Insulation Withstand Voltage (DC) |
2500 |
V | |
|
Tstg |
Storage Temperature |
-55 to 175
|
| |
|
Tj |
Max. Operating Junction Temperature | |||
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