MFG:STMicroelectronics Category:Discrete Semiconductor Products Package Cooled:TO 220 AB NON ISOL D/C:O5
STP16NF06, STP16NF06FP, STP16NF06L Datasheet download
Category: Discrete Semiconductor Products
MFG: STMicroelectronics
Package Cooled: TO 220 AB NON ISOL
D/C: O5
Description: MOSFET N-CH 60V 16A TO-220
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PDF/DataSheet Download
Datasheet: STP16NF06
File Size: 376048 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: STP16NF06FP
File Size: 376048 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: STP16NF06L
File Size: 345212 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
| Technical/Catalog Information | STP16NF06 |
| Vendor | STMicroelectronics |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25° C | 16A |
| Rds On (Max) @ Id, Vgs | 100 mOhm @ 8A, 10V |
| Input Capacitance (Ciss) @ Vds | 315pF @ 25V |
| Power - Max | 45W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 13nC @ 10V |
| Package / Case | TO-220-3 (Straight Leads) |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | STP16NF06 STP16NF06 497 2766 5 ND 49727665ND 497-2766-5 |
This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
|
Symbol |
Parameter |
Value |
Unit | |
|
STP10NK80Z |
STP10NK80ZF |
|||
|
VDS |
Drain-source Voltage (VGS = 0) |
60 |
V | |
|
VDGR |
Drain- gate Voltage (RGS = 20 k) |
60 |
V | |
|
VGS |
Gate-Source Voltage |
± 20 |
V | |
|
ID |
Drain Current (continuous) at Tc = 25 |
16 |
11 (*)
|
A |
|
ID |
Drain Current (continuous) at Tc = 100 |
11 |
7.5 (*)
|
A |
|
IDM(`) |
Drain Current (pulsed) |
64 |
44 (*)
|
A |
|
PTOT |
Total Dissipation at Tc = 25 |
45 |
25 |
W |
|
Derating Factor |
0.3 |
0.17 |
W/ | |
| dv/dt (1) |
Gate source ESD(HBM-C=100pF, R=1.5KW) |
20 |
V/ns | |
|
EAS (2) |
Peak Diode Recovery voltage slope |
130 |
mJ | |
| VISO |
Insulation Withstand Voltage (DC) |
2500
|
V | |
|
Tstg |
Storage Temperature |
-55 to 175 |
| |
| Tj | Operating Junction Temperature | |||
| Technical/Catalog Information | STP16NF06L |
| Vendor | STMicroelectronics |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25° C | 16A |
| Rds On (Max) @ Id, Vgs | 90 mOhm @ 8A, 10V |
| Input Capacitance (Ciss) @ Vds | 345pF @ 25V |
| Power - Max | 45W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 10nC @ 5V |
| Package / Case | TO-220-3 (Straight Leads) |
| FET Feature | Logic Level Gate |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | STP16NF06L STP16NF06L 497 2765 5 ND 49727655ND 497-2765-5 |
This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" stripbased process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing
reproducibility.
|
Symbol |
Parameter |
Value |
Unit | |
|
STP16NF06L |
STP16NF06LFP | |||
| VDS |
Drain-source Voltage (VGS = 0) |
60 |
V | |
| VDGR |
Drain-gate Voltage (RGS = 20 k) |
60 |
V | |
| VGS |
Gate- source Voltage |
±20 |
V | |
| ID |
Drain Current (continuos) at TC = 25°C |
16 |
11(*) |
A |
| ID |
Drain Current (continuos) at TC = 100°C |
11 |
7.5(*) |
A |
| IDM () |
Drain Current (pulsed) |
64 |
44(*) |
A |
| PTOT |
Total Dissipation at TC = 25°C |
45 |
25 |
W |
|
Derating Factor |
0.3 |
0.17 |
W/°C | |
| dv/dt (1) |
Peak Diode Recovery voltage slope |
23 |
V/ns | |
| EAS (2) |
Single Pulse Avalanche Energy |
127 |
mJ | |
| VISO |
Insulation Withstand Voltage (DC) |
-------- |
2500 |
V |
| Tstg |
Storage Temperature |
-55 to 175 |
°C | |
| Tj |
Max. Operating Junction Temperature |
-55 to 175 |
°C | |
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