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STP19N20, STP19NB20, STP19NB20FP

Table of contents:
Info of STP19N20
Info of STP19NB20
Info of STP19NB20FP

STP19N20, STP19NB20, STP19NB20FP Selling Leads, Datasheet

MFG:STMicroelectronics Category:Discrete Semiconductor Products Package Cooled:TO-220 D/C:04+

STP19N20, STP19NB20, STP19NB20FP Datasheet download

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Part Number: STP19NB20

Category: Discrete Semiconductor Products

MFG: STMicroelectronics

Package Cooled: TO-220

D/C: 04+

Description: MOSFET N-CH 200V 19A TO-220

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STP19NB20 Parameters

Technical/Catalog Information	STP19NB20
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	200V
Current - Continuous Drain (Id) @ 25° C	19A
Rds On (Max) @ Id, Vgs	180 mOhm @ 9.5A, 10V
Input Capacitance (Ciss) @ Vds	1000pF @ 25V
Power - Max	125W
Packaging	Tube
Gate Charge (Qg) @ Vgs	40nC @ 10V
Package / Case	TO-220-3 (Straight Leads)
FET Feature	Standard
Lead Free Status	Request Inventory Verification
RoHS Status	Request Inventory Verification
Other Names	STP19NB20 STP19NB20 497 2650 5 ND 49726505ND 497-2650-5

STP19NB20 General Description

Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company's proprieraty edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.

STP19NB20 Maximum Ratings

Symbol	Parameter	Value		Unit
Symbol	Parameter	STP(B)19NB20(-1)	STP19NB20FP	Unit
V_DS	Drain-source Voltage (V_GS = 0)	200		V
V_DGR	Drain-gate Voltage (R_GS = 20 k)	200		V
V_GS	Gate- source Voltage	± 30		V
I_D	Drain Current (continuos) at T_C = 25	19	10	A
I_D	Drain Current (continuos) at T_C = 100	12	6.0	A
I_DM()	Drain Current (pulsed)	76	76	A
P_tot	Total Dissipation at T_C = 25	125	35	W
	Derating Factor	1	0.28	W/
dv/dt (1)	Peak Diode Recovery voltage slope	5.5		V/ns
V_ISO	Insulation Withstand Voltage (DC)	-	2500	V
T_stg	Storage Temperature	65 to 150
T_j	Max. Operating Junction Temperature	150

(•)Pulse width limited by safe operating area
(1)I_SD 19 A, di/dt 300A/s, V_DD V_(BR)DSS,T_jT_JMAX

STP19NB20 Features

` TYPICAL R_DS(on) = 0.15
` EXTREMELY HIGH dv/dt CAPABILITY
` 100% AVALANCHE TESTED
` NEW HIGH VOLTAGE BENCHMARK
` GATE CHARGE MINIMIZED

STP19NB20 Typical Application

· HIGH CURRENT, HIGH SPEED SWITCHING
· SWITH MODE POWER SUPPLIES (SMPS)
· DC-AC CONVERTERS FOR TELECOM,INDUSTRIAL AND CONSUMER ENVIRONMENT

STP19NB20FP General Description

STP19NB20FP Maximum Ratings

Symbol	Parameter	Value		Unit
Symbol	Parameter	STP(B)19NB20(-1)	STP19NB20FP	Unit
V_DS	Drain-source Voltage (V_GS = 0)	200		V
V_DGR	Drain-gate Voltage (R_GS = 20 k)	200		V
V_GS	Gate- source Voltage	± 30		V
I_D	Drain Current (continuos) at T_C = 25	19	10	A
I_D	Drain Current (continuos) at T_C = 100	12	6.0	A
I_DM()	Drain Current (pulsed)	76	76	A
P_tot	Total Dissipation at T_C = 25	125	35	W
	Derating Factor	1	0.28	W/
dv/dt (1)	Peak Diode Recovery voltage slope	5.5		V/ns
V_ISO	Insulation Withstand Voltage (DC)	-	2500	V
T_stg	Storage Temperature	65 to 150
T_j	Max. Operating Junction Temperature	150

(•)Pulse width limited by safe operating area
(1)I_SD 19 A, di/dt 300A/s, V_DD V_(BR)DSS,T_jT_JMAX

STP19NB20FP Features

` TYPICAL R_DS(on) = 0.15
` EXTREMELY HIGH dv/dt CAPABILITY
` 100% AVALANCHE TESTED
` NEW HIGH VOLTAGE BENCHMARK
` GATE CHARGE MINIMIZED

STP19NB20FP Typical Application

· HIGH CURRENT, HIGH SPEED SWITCHING
· SWITH MODE POWER SUPPLIES (SMPS)
· DC-AC CONVERTERS FOR TELECOM,INDUSTRIAL AND CONSUMER ENVIRONMENT

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