MFG:STMicroelectronics Category:Discrete Semiconductor Products Package Cooled:2005+ D/C:05+
STP2003QFP, STP2003QFP1004183, STP200NF03 Datasheet download
Category: Discrete Semiconductor Products
MFG: STMicroelectronics
Package Cooled: 2005+
D/C: 05+
Description: MOSFET N-CH 30V 120A TO-220
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PDF/DataSheet Download
Datasheet: STP04CM596B1R
File Size: 412025 KB
Manufacturer: STMicroelectronics
Download : Click here to Download
PDF/DataSheet Download
Datasheet: STP04CM596B1R
File Size: 412025 KB
Manufacturer: STMicroelectronics
Download : Click here to Download
PDF/DataSheet Download
Datasheet: STP200NF03
File Size: 570407 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
| Technical/Catalog Information | STP200NF03 |
| Vendor | STMicroelectronics |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25° C | 120A |
| Rds On (Max) @ Id, Vgs | 3.6 mOhm @ 60A, 10V |
| Input Capacitance (Ciss) @ Vds | 4950pF @ 25V |
| Power - Max | 300W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 140nC @ 10V |
| Package / Case | TO-220-3 (Straight Leads) |
| FET Feature | Standard |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | STP200NF03 STP200NF03 497 6738 5 ND 49767385ND 497-6738-5 |
This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
| Symbol | Parameter |
Value |
Unit |
| VDS | Drain-source Voltage (VGS = 0) |
30 |
V |
| VDGR | Drain-gate Voltage (RGS = 20 k) |
30 |
V |
| VGS | Gate- source Voltage |
±20 |
V |
| ID(**) | Drain Current (continuos) at TC = 25 |
120 |
A |
| ID | Drain Current (continuos) at TC = 100 |
120 |
A |
| IDM() | Drain Current (pulsed) |
480 |
A |
| PTOT | Total Dissipation at TC = 25 |
300 |
W |
| Derating Factor |
2.0 |
W/ | |
| dv/dt (1) | Peak Diode Recovery voltage slope |
1.5 |
V/ns |
| EAS(2) | Single Pulse Avalanche Energy |
1.45 |
J |
| Tstg | Storage Temperature |
55 to 175
|
|
| Tj | Max. Operating Junction Temperature |
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