MFG:STMicroelectronics Category:Discrete Semiconductor Products Package Cooled:TO 220 AB NON ISOL D/C:TO-
STP200NF04, STP200NF04L, STP2012QFD Datasheet download
Category: Discrete Semiconductor Products
MFG: STMicroelectronics
Package Cooled: TO 220 AB NON ISOL
D/C: TO-
Description: MOSFET N-CH 40V 120A TO-220
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PDF/DataSheet Download
Datasheet: STP200NF04
File Size: 414113 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: STP200NF04L
File Size: 323584 KB
Manufacturer: ST
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PDF/DataSheet Download
Datasheet: STP04CM596B1R
File Size: 412025 KB
Manufacturer: STMicroelectronics
Download : Click here to Download
| Technical/Catalog Information | STP200NF04 |
| Vendor | STMicroelectronics |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 40V |
| Current - Continuous Drain (Id) @ 25° C | 120A |
| Rds On (Max) @ Id, Vgs | 3.7 mOhm @ 90A, 10V |
| Input Capacitance (Ciss) @ Vds | 5100pF @ 25V |
| Power - Max | 310W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 210nC @ 10V |
| Package / Case | TO-220-3 (Straight Leads) |
| FET Feature | Logic Level Gate |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | STP200NF04 STP200NF04 497 3524 5 ND 49735245ND 497-3524-5 |
This MOSFET is the latest development of STMicroelectronics unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
| Symbol | Parameter |
Value |
Unit | |
| VDS | Drain-source Voltage (VGS = 0) |
40 |
V | |
| VDGR | Drain-gate Voltage (RGS = 20 k) |
40 |
V | |
| VGS | Gate- source Voltage |
± 20 |
V | |
| ID(#) | Drain Current (continuos) at TC = 25 |
120 |
A | |
| ID(#) | Drain Current (continuos) at TC = 100 |
120 |
A | |
| IDM(`) | Drain Current (pulsed) |
480 |
A | |
| PTOT | Total Dissipation at TC = 25 |
310 |
W | |
| Derating Factor |
2.07 |
W/ | ||
| dv/dt (1) | Peak Diode Recovery voltage slope |
1.5 |
V/ns | |
| EAS(2) | Single Pulse Avalanche Energy |
1.3 |
J | |
| Tj Tstg |
Operating Junction Temperature Storage Temperature |
-55 to 175 |
| |
| Technical/Catalog Information | STP200NF04L |
| Vendor | STMicroelectronics |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 40V |
| Current - Continuous Drain (Id) @ 25° C | 120A |
| Rds On (Max) @ Id, Vgs | 3.8 mOhm @ 50A, 10V |
| Input Capacitance (Ciss) @ Vds | 6400pF @ 25V |
| Power - Max | 300W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 90nC @ 4.5V |
| Package / Case | TO-220-3 (Straight Leads) |
| FET Feature | Logic Level Gate |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | STP200NF04L STP200NF04L 497 4819 5 ND 49748195ND 497-4819-5 |
This MOSFET is the latest development of STMicroelectronics unique "Single Feature Size™" stripbased process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and lesscritical alignement steps therefore a remarkable manufacturing reproducibility. This new improved device has been specifically designed for Automotive applications.
| Symbol | Parameter | Value | Unit |
| VDS | Drain-source Voltage (VGS = 0) | 40 | V |
| VGDR | Drain-gate Voltage (RGS=20 K) | 40 | V |
| VGS | Gate- source Voltage | ± 16 | V |
| ID (**) | Drain Current (continuous) at TC = 25°C | 120 | A |
| ID | Drain Current (continuous) at TC = 100°C | 120 | A |
| IDM (2) | Drain Current (pulsed) | 480 | A |
| PTOT | Total Dissipation at TC = 25°C | 300 | W |
| Derating Factor | 2 | W/°C | |
| dv/dt (1) | Peak Diode Recovery voltage slope | 3.6 | V/ns |
| EAS (3) | Single Pulse Avalanche Energy | 1.4 | J |
| Tstg | Storage Temperature | -55 to 175 | °C |
| Tj | Max. Operating Junction Temperature |
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