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STP20NM50, STP20NM505, STP20NM50FD

STP20NM50, STP20NM505, STP20NM50FD Selling Leads, Datasheet

MFG:STMicroelectronics  Category:Discrete Semiconductor Products  Package Cooled:02+  D/C:TO-220

STP20NM50 Picture

STP20NM50, STP20NM505, STP20NM50FD Datasheet download

Five Points

Part Number: STP20NM50

Category: Discrete Semiconductor Products

MFG: STMicroelectronics

Package Cooled: 02+

D/C: TO-220

Description: MOSFET N-CH 500V 20A TO-220

 

 
 
 
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  • STP20NM50

  • Vendor: ST Pack: TO Qty: 5000  Adddate: 2026-08-16
  • Inquire Now
  • Abenic   China
    Contact: Mr.Wong   MSN:abenic8@hotmail.com
    Tel: 86-755-83019622
    Fax: 86-755-83019622
    (334)
  • STP20NM50

  • Vendor: STM Pack: Original D/C: 12+& Qty: 1000000  Adddate: 2026-08-16
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  • TODENKI ELECTRONICS COMPANY   China
    Contact: Ms.Alice  
    Tel: 86-755-82565937
    Fax: 86-755-83206987
    (14)
  • STP20NM50FP

  • Vendor: ST D/C: 07+& Qty: 1K  Adddate: 2026-08-16
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  • Sunny Technology   Hong
    Contact: Ms.Annie   MSN:sunnytechnology@hotmail.com
    Tel: 86-852-65159660
    Fax: --
    (8)
  • STP20NM50FP

  • Vendor: ST D/C: 06+&   Adddate: 2026-08-16
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  • orientelec   China
    Contact: Ms.Jessica Ren   MSN:jessica@orientelec.cn
    Tel: 86-10-62103873/62101821
    Fax: 86-10-62102720
    (5)

About STP20NM50

PDF/DataSheet Download

Datasheet: STP20NM50

File Size: 359150 KB

Manufacturer: STMICROELECTRONICS [STMicroelectronics]

Download : Click here to Download

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STP20NM505 Suppliers

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  • STP02

  • Vendor: SAMSUNG Pack: QFP D/C: 06+& Qty: 100 Note: New original stock  Adddate: 2026-08-16
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  • SHENZHEN SHI KEN ELECTRONICS   China
    Contact: Mr.lin   MSN:skyline.dk@msn.com
    Tel: 86-755-83030307
    Fax: 86-755-83030408
    (6)

About STP20NM505

PDF/DataSheet Download

Datasheet: STP20NM505

File Size: 359150 KB

Manufacturer: STMICROELECTRONICS [STMicroelectronics]

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STP20NM50FD Suppliers

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  • STP02

  • Vendor: SAMSUNG Pack: QFP D/C: 06+& Qty: 100 Note: New original stock  Adddate: 2026-08-16
  • Inquire Now
  • SHENZHEN SHI KEN ELECTRONICS   China
    Contact: Mr.lin   MSN:skyline.dk@msn.com
    Tel: 86-755-83030307
    Fax: 86-755-83030408
    (6)

About STP20NM50FD

PDF/DataSheet Download

Datasheet: STP20NM50FD

File Size: 283413 KB

Manufacturer: STMICROELECTRONICS [STMicroelectronics]

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STP20NM50 Parameters

Technical/Catalog InformationSTP20NM50
VendorSTMicroelectronics
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25° C20A
Rds On (Max) @ Id, Vgs250 mOhm @ 10A, 10V
Input Capacitance (Ciss) @ Vds 1480pF @ 25V
Power - Max192W
PackagingTube
Gate Charge (Qg) @ Vgs56nC @ 10V
Package / CaseTO-220-3 (Straight Leads)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names STP20NM50
STP20NM50
497 2663 5 ND
49726635ND
497-2663-5

STP20NM50 General Description

The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company's PowerMESH™horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and exellent avalanche characteristics and dynamic performances.

STP20NM50 Maximum Ratings

Symbol Parameter
Value
Unit
    TO-220/
D²PAK/I²PAK
TO-220FP  
VGS Gate-Source Voltage
± 30
V
ID Drain Current (continuous) at TC = 25
20
20(Note 3)
A
ID Drain Current (continuous) at TC = 100
12.6
12.6(Note 3)
A
IDM Note 2 Drain Current (pulsed)
80
80(Note 3)
A
PTOT Total Dissipation at TC = 25
192
45
W
Derating Factor
1.2
0.36
W/
dv/dt Note 1 Peak Diode Recovery voltage slope
15
V/ns
VISO Insulation Withstand Volatge (DC)
-
2000
V
Tj
Tstg
Operating Junction Temperature
Storage Temperature
-65 to 150

STP20NM50 Features

· HIGH dv/dt AND AVALANCHE CAPABILITIES
· 100% AVALANCHE TESTED
· LOW INPUT CAPACITANCE AND GATE CHARGE
· LOW GATE INPUT RESISTANCE

STP20NM50 Typical Application

The MDmesh™ family is very suitable for increasing power density of high voltage converters allowing system miniaturization andhiher efficiencies.

STP20NM50FD Parameters

Technical/Catalog InformationSTP20NM50FD
VendorSTMicroelectronics
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25° C20A
Rds On (Max) @ Id, Vgs250 mOhm @ 10A, 10V
Input Capacitance (Ciss) @ Vds 1380pF @ 25V
Power - Max192W
PackagingTube
Gate Charge (Qg) @ Vgs53nC @ 10V
Package / CaseTO-220-3 (Straight Leads)
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names STP20NM50FD
STP20NM50FD
497 6739 5 ND
49767395ND
497-6739-5

STP20NM50FD General Description

The FDmesh™ associates all advantages of reduced on-resistance and fast switching with an intrinsic fastrecovery body diode. It is therefore strongly recommended for bridge topologies, in particular ZVS phaseshift converters.

STP20NM50FD Maximum Ratings

Symbol Parameter
Value
Unit
VDS Drain-source Voltage (VGS = 0)
500
V
VDGR Drain-gate Voltage (RGS = 20 k)
500
V
VGS Gate- source Voltage
±30
V
ID Drain Current (continuos) at TC = 25
20
A
ID Drain Current (continuos) at TC = 100
14
A
IDM(`) Drain Current (pulsed)
80
A
PTOT Total Dissipation at TC = 25
192
W
Derating Factor
1.2
W/
dv/dt (1) Peak Diode Recovery voltage slope
20
V/ns
Tstg Storage Temperature
65 to 150
Tj Max. Operating Junction Temperature
150
(`) Pulse width limited by safe operating area
(1) ISD 20A, di/dt 200 A/s, VDD V(BR)DSS, Tj TJMAX.

STP20NM50FD Features

` TYPICAL RDS(on) = 0.22
` HIGH dv/dt AND AVALANCHE CAPABILITIES
` 100% AVALANCHE TESTED
` LOW INPUT CAPACITANCE AND GATE CHARGE
` LOW GATE INPUT RESISTANCE
` TIGHT PROCESS CONTROL AND HIGH MANUFACTURING YIELDS

STP20NM50FD Typical Application

· ZVS PHASE-SHIFT FULL BRIDGE CONVERTERS FOR SMPS AND WELDING EQUIPMENT

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