MFG:STMicroelectronics Category:Discrete Semiconductor Products Package Cooled:TO 220 AB NON ISOL D/C:08+/09+
STP21NM50N, STP21NM60N, STP22 Datasheet download
Category: Discrete Semiconductor Products
MFG: STMicroelectronics
Package Cooled: TO 220 AB NON ISOL
D/C: 08+/09+
Description: MOSFET N-CH 600V 17A TO-220
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Datasheet: STP21NM50N
File Size: 648955 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
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PDF/DataSheet Download
Datasheet: STP04CM596B1R
File Size: 412025 KB
Manufacturer: STMicroelectronics
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PDF/DataSheet Download
Datasheet: STP22NE03
File Size: 77225 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
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| Technical/Catalog Information | STP21NM50N |
| Vendor | STMicroelectronics |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 500V |
| Current - Continuous Drain (Id) @ 25° C | 18A |
| Rds On (Max) @ Id, Vgs | 190 mOhm @ 9A, 10V |
| Input Capacitance (Ciss) @ Vds | 1950pF @ 25V |
| Power - Max | 140W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 65nC @ 10V |
| Package / Case | TO-220-3 (Straight Leads) |
| FET Feature | Standard |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | STP21NM50N STP21NM50N 497 4820 5 ND 49748205ND 497-4820-5 |
The STx21NM50N is realized with the second generation of MDmesh Technology. This revolutionary MOSFET associates a new vertical structure to the Company's strip layout to yield one of the world's lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.
| Symbol | Parameter |
Value |
Unit | |
| TO-220 / D2PAK / I2PAK / TO-247 | TO-220FP | |||
| VDS | Drain-source Voltage (VGS = 0) |
500 |
V | |
| VDGR | Drain-gate Voltage (RGS = 20 k) |
500 |
V | |
| VGS | Gate- source Voltage |
±25 |
V | |
| ID | Drain Current (continuos) at TC = 25 |
18 |
18(*) |
A |
| ID | Drain Current (continuos) at TC = 100 |
11 |
11(*) |
A |
| IDM(`) | Drain Current (pulsed) |
72 |
72(*) |
A |
| PTOT | Total Dissipation at TC = 25 |
140 |
30 |
W |
| Derating Factor |
1.12 |
0.23 |
W/ | |
| dv/dt (1) | Peak Diode Recovery voltage slope |
15 |
V/ns | |
| VISO | Insulation Winthstand Voltage (DC) |
- |
2500 |
V |
| Tstg | Storage Temperature |
55 to 150 150 |
||
| Tj | Max. Operating Junction Temperature | |||
The MDmesh™ II family is very suitable for increasing power density of high voltage converters allowing system miniaturization and higher efficiencies.
| Technical/Catalog Information | STP21NM60N |
| Vendor | STMicroelectronics |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 600V |
| Current - Continuous Drain (Id) @ 25° C | 17A |
| Rds On (Max) @ Id, Vgs | 220 mOhm @ 8.5A, 10V |
| Input Capacitance (Ciss) @ Vds | 1900pF @ 50V |
| Power - Max | 140W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 66nC @ 10V |
| Package / Case | TO-220-3 (Straight Leads) |
| FET Feature | Standard |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | STP21NM60N STP21NM60N 497 5019 5 ND 49750195ND 497-5019-5 |
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