MFG:STMicroelectronics Category:Discrete Semiconductor Products Package Cooled:sgs D/C:dc0310
STP22NF03L, STP22NM50, STP22NM50FP Datasheet download
Category: Discrete Semiconductor Products
MFG: STMicroelectronics
Package Cooled: sgs
D/C: dc0310
Description: MOSFET N-CH 30V 22A TO-220
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PDF/DataSheet Download
Datasheet: STP22NF03L
File Size: 245371 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: STP22NM50
File Size: 364782 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: STP22NM50FP
File Size: 364782 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
| Technical/Catalog Information | STP22NF03L |
| Vendor | STMicroelectronics |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25° C | 22A |
| Rds On (Max) @ Id, Vgs | 50 mOhm @ 11A, 10V |
| Input Capacitance (Ciss) @ Vds | 330pF @ 25V |
| Power - Max | 45W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 9nC @ 5V |
| Package / Case | TO-220-3 (Straight Leads) |
| FET Feature | Standard |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | STP22NF03L STP22NF03L 497 7516 5 ND 49775165ND 497-7516-5 |
This Power Mosfet is the latest development of STMicroelectronics unique "Single Feature Size™" stripbased process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
|
Symbol |
Parameter |
Value |
Unit |
|
VDS |
Drain-source Voltage (VGS = 0) |
30 |
V |
|
VDGR |
Drain- gate Voltage (RGS = 20 k) |
30 |
V |
|
VGS |
Gate-Source Voltage |
± 15 |
V |
|
ID |
Drain Current (continuous) at Tc = 25 |
22 |
A |
|
ID |
Drain Current (continuous) at Tc = 100 |
16 |
A |
|
IDM(`) |
Drain Current (pulsed) |
88 |
A |
|
PTOT |
Total Dissipation at Tc = 25 |
45 |
W |
|
Derating Factor |
0.3 |
W/
| |
|
dv/dt (1) |
Peak Diode Recovery voltage slope |
6 |
V/ns |
| EAS (2) | Single Pulse Avalanche Energy | 200 | mJ |
|
Tstg |
Storage Temperature |
-65 to 150 |
|
|
Tj |
Max. Operating Junction Temperature |
175 |
|
The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company's PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company's proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition's products.
| Symbol | Parameter |
Value |
Unit | |
| STP(B)22NM50(-1) | STP22NM50FP | |||
| VDS | Drain-source Voltage (VGS = 0) |
500 |
V | |
| VDGR | Drain-gate Voltage (RGS = 20 k) |
500 |
V | |
| VGS | Gate- source Voltage |
±30 |
V | |
| ID | Drain Current (continuos) at TC = 25 |
20 |
20(*) |
A |
| ID | Drain Current (continuos) at TC = 100 |
12.6 |
12.6(*) |
A |
| IDM(`) | Drain Current (pulsed) |
80 |
80(*) |
A |
| PTOT | Total Dissipation at TC = 25 |
192 |
45 |
W |
| Derating Factor |
1.2 |
0.36 |
W/ | |
| dv/dt (1) | Peak Diode Recovery voltage slope |
15 |
V/ns | |
| VISO | Insulation Winthstand Voltage (DC) |
- |
2000 |
V |
| Tstg | Storage Temperature |
65 to 150 |
||
| Tj | Max. Operating Junction Temperature |
150 |
||
The MDmesh™ family is very suitable for increasing power density of high voltage converters allowing system miniaturization and higher efficiencies.
The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company's PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company's proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition's products.
| Symbol | Parameter |
Value |
Unit | |
| STP(B)22NM50(-1) | STP22NM50FP | |||
| VDS | Drain-source Voltage (VGS = 0) |
500 |
V | |
| VDGR | Drain-gate Voltage (RGS = 20 k) |
500 |
V | |
| VGS | Gate- source Voltage |
±30 |
V | |
| ID | Drain Current (continuos) at TC = 25 |
20 |
20(*) |
A |
| ID | Drain Current (continuos) at TC = 100 |
12.6 |
12.6(*) |
A |
| IDM(`) | Drain Current (pulsed) |
80 |
80(*) |
A |
| PTOT | Total Dissipation at TC = 25 |
192 |
45 |
W |
| Derating Factor |
1.2 |
0.36 |
W/ | |
| dv/dt (1) | Peak Diode Recovery voltage slope |
15 |
V/ns | |
| VISO | Insulation Winthstand Voltage (DC) |
- |
2000 |
V |
| Tstg | Storage Temperature |
65 to 150 |
||
| Tj | Max. Operating Junction Temperature |
150 |
||
The MDmesh™ family is very suitable for increasing power density of high voltage converters allowing system miniaturization and higher efficiencies.
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