MFG:STMicroelectronics Category:Discrete Semiconductor Products Package Cooled:09+ D/C:TO-
STP2NC70ZFP, STP2NK100Z, STP2NK60Z Datasheet download
Category: Discrete Semiconductor Products
MFG: STMicroelectronics
Package Cooled: 09+
D/C: TO-
Description: MOSFET N-CH 600V 1.4A TO-220
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Datasheet: STP2NC70ZFP
File Size: 649470 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
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PDF/DataSheet Download
Datasheet: STP04CM596B1R
File Size: 412025 KB
Manufacturer: STMicroelectronics
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PDF/DataSheet Download
Datasheet: STP2NK60Z
File Size: 538302 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to-back Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested by a large variety of single-switch applications.
| Symbol | Parameter |
Value |
Unit | ||
|
STP2NC70Z |
STP2NC70ZFP |
STD1NC70Z STD1NC70Z-1 | |||
| VDS | Collector-Source Voltage (VGS = 0 V) |
700 |
V | ||
| VDGR | Drain-gate Voltage (RGS = 20 k) |
700 |
V | ||
| VGS | Gate-Source Voltage |
±25 |
V | ||
| ID | Drain Current (continuous) at TC = 25 |
1.4 |
1.4(*) |
1.4 |
A |
| ID | Drain Current (continuous) at TC = 100 |
0.9 |
0.9(*) |
0.9 |
A |
| IDM(`) | Drain Current (pulsed) |
5.6 |
5.6(*) |
5.6 |
A |
| Ptot | Total Dissipation at TC = 25 |
50 |
25 |
45 |
W |
| Derating Factor |
0.4 |
0.2 |
0.36 |
W/ | |
| IGS | Gate-source Current (DC) |
±50 |
mA | ||
| VESD(G-S) | Gate source ESD(HBM-C=100pF, R=1.5K) |
2000 |
V | ||
| dv/dt(1) | Peak Diode Recovery voltage slope |
3 |
V/ns | ||
| Tj Tstg |
Operating Junction Temperature Storage Temperature |
-65 to 150 -65 to 150 |
| ||
| Technical/Catalog Information | STP2NK100Z |
| Vendor | STMicroelectronics |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 1000V (1kV) |
| Current - Continuous Drain (Id) @ 25° C | 1.85A |
| Rds On (Max) @ Id, Vgs | 8.5 Ohm @ 900mA, 10V |
| Input Capacitance (Ciss) @ Vds | 499pF @ 25V |
| Power - Max | 70W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 16nC @ 10V |
| Package / Case | TO-220-3 (Straight Leads) |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | STP2NK100Z STP2NK100Z 497 7518 5 ND 49775185ND 497-7518-5 |
| Technical/Catalog Information | STP2NK60Z |
| Vendor | STMicroelectronics |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 600V |
| Current - Continuous Drain (Id) @ 25° C | 1.4A |
| Rds On (Max) @ Id, Vgs | 8 Ohm @ 700mA, 10V |
| Input Capacitance (Ciss) @ Vds | 170pF @ 25V |
| Power - Max | 45W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 10nC @ 10V |
| Package / Case | TO-220-3 (Straight Leads) |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | STP2NK60Z STP2NK60Z 497 4377 5 ND 49743775ND 497-4377-5 |
The SuperMESH™ series is obtained through an extreme optimization of ST's well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.
| Symbol | Parameter |
Value |
Unit | ||
|
TO-220 / IPAK |
TO-92 |
TO-220FP | |||
| VDS | Collector-Source Voltage (VGS = 0 V) |
800 |
V | ||
| VDGR | Drain-gate Voltage (RGS = 20 k) |
800 |
V | ||
| VGS | Gate-Source Voltage |
±30 |
V | ||
| ID | Drain Current (continuous) at TC = 25 |
1.4 |
0.4 |
1.4 |
A |
| ID | Drain Current (continuous) at TC = 100 |
0.77 |
0.25 |
0.77 |
A |
| IDM(`) | Drain Current (pulsed) |
5.6 |
1.6 |
5.6 |
A |
| PTOT | Total Dissipation at TC = 25 |
45 |
3 |
20 |
W |
| Derating Factor |
0.36 |
0.025 |
0.16 |
W/ | |
| VESD(G-S) | Gate source ESD(HBM-C=100pF, R=1.5K) |
1500 |
KV | ||
| dv/dt(1) | Peak Diode Recovery voltage slope |
4.5 |
V/ns | ||
| VISO | Insulation Withstand Voltage (DC) |
- |
- |
2500 |
V |
| Tj Tstg |
Operating Junction Temperature Storage Temperature |
-55 to 150 |
| ||
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