STP5NB80, STP5NB80FP, STP5NB90 Selling Leads, Datasheet
MFG:ST Package Cooled:TO-220 D/C:2003
STP5NB80, STP5NB80FP, STP5NB90 Datasheet download
Part Number: STP5NB80
MFG: ST
Package Cooled: TO-220
D/C: 2003
STP5NB80, STP5NB80FP, STP5NB90
- Table of contents:
Info of STP5NB80
Info of STP5NB80FP
Info of STP5NB90
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About STP5NB80
PDF/DataSheet Download
Datasheet: STP5NB80
File Size: 110282 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
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About STP5NB80FP
PDF/DataSheet Download
Datasheet: STP5NB80FP
File Size: 110282 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
About STP5NB90
PDF/DataSheet Download
Datasheet: STP5NB90
File Size: 51226 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
STP5NB80 General Description
Using the latest high voltage MESH OVERLAY] process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company's proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.
STP5NB80 Maximum Ratings
|
Symbol |
Parameter |
Value |
Units |
|
VDSS |
Drain-Source Voltage |
800 |
V |
|
VDGR |
Drain- gate Voltage (RGS = 20 k) |
800 |
V |
|
VGS |
Gate-source Voltage |
±30 |
V |
|
ID |
Drain Current (continuous) at Tc = 25 |
5 |
A |
|
ID |
Drain Current (continuous) at Tc = 100 |
3.2 |
A |
|
IDM(•) |
Drain Current (pulsed) |
20 |
A |
|
Ptot |
Total Dissipation at Tc = 25 |
110 |
W |
| Derat ing Factor |
0.88 |
W/ | |
|
dv/dt (1) |
Peak Diode Recovery voltage slope |
4 |
V/ns |
|
VISO |
Insulat ion Withstand Voltage (DC) |
- |
V |
|
Tstg |
Storage Temperature |
-65 to +150 |
|
|
Tj |
Max. Operating Junction Temperature |
150 |
(*) Limited only by maximum temperature allowed
( 1) ISD 5A, di/dt 200 A/s, VDD V(BR)DSS, Tj TJMAX
STP5NB80 Features
|
TYPE |
VDSS |
RDS(on) |
ID |
| STP5NB80 |
800 V |
< 2.2 |
5 A |
` TYPICAL RDS(on) = 1.8
` EXTREMELY HIGH dv/dt CAPABILITY
` 100% AVALANCHE TESTED
` VERY LOW INTRINSIC CAPACITANCES
` GATE CHARGE MINIMIZED
STP5NB80 Typical Application
· HIGH CURRENT, HIGH SPEED SWITCHING
· SWITCH MODE POWER SUPPLIES(SMPS)
· DC-AC CONVERTERS FOR WELDING EQUIPMENTAND UNINTERRUPTIBLE POWERSUPPLIES AND MOTOR DRIVE
· SWITCH MODE POWER SUPPLIES(SMPS)
· DC-AC CONVERTERS FOR WELDING EQUIPMENTAND UNINTERRUPTIBLE POWERSUPPLIES AND MOTOR DRIVE
STP5NB80FP General Description
Using the latest high voltage MESH OVERLAY] process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company's proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.
STP5NB80FP Maximum Ratings
|
Symbol |
Parameter |
Value |
Units |
|
VDSS |
Drain-Source Voltage |
800 |
V |
|
VDGR |
Drain- gate Voltage (RGS = 20 k) |
800 |
V |
|
VGS |
Gate-source Voltage |
±30 |
V |
|
ID |
Drain Current (continuous) at Tc = 25 |
5(*) |
A |
|
ID |
Drain Current (continuous) at Tc = 100 |
3.2 |
A |
|
IDM(•) |
Drain Current (pulsed) |
20 |
A |
|
Ptot |
Total Dissipation at Tc = 25 |
40 |
W |
| Derat ing Factor |
0.32 |
W/ | |
|
dv/dt (1) |
Peak Diode Recovery voltage slope |
4 |
V/ns |
|
VISO |
Insulat ion Withstand Voltage (DC) |
2000 |
V |
|
Tstg |
Storage Temperature |
-65 to +150 |
|
|
Tj |
Max. Operating Junction Temperature |
150 |
(*) Limited only by maximum temperature allowed
( 1) ISD 5A, di/dt 200 A/s, VDD V(BR)DSS, Tj TJMAX
STP5NB80FP Features
|
TYPE |
VDSS |
RDS(on) |
ID |
| STP5NB80FP |
800 V |
< 2.2 |
5 A |
` TYPICAL RDS(on) = 1.8
` EXTREMELY HIGH dv/dt CAPABILITY
` 100% AVALANCHE TESTED
` VERY LOW INTRINSIC CAPACITANCES
` GATE CHARGE MINIMIZED
STP5NB80FP Typical Application
· HIGH CURRENT, HIGH SPEED SWITCHING
· SWITCH MODE POWER SUPPLIES(SMPS)
· DC-AC CONVERTERS FOR WELDING EQUIPMENTAND UNINTERRUPTIBLE POWERSUPPLIES AND MOTOR DRIVE
· SWITCH MODE POWER SUPPLIES(SMPS)
· DC-AC CONVERTERS FOR WELDING EQUIPMENTAND UNINTERRUPTIBLE POWERSUPPLIES AND MOTOR DRIVE
STP5NB90 General Description
Using the latest high voltage MESH OVERLAY]process, STMicroelectronics has designed anadvanced family of power MOSFETs with outstanding performances. The new patentpending strip layout coupled with the Company'sproprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.
STP5NB90 Maximum Ratings
| Symbol | Parameter | Value | Unit | |
| STP5NB90 | STP5NB90FP | |||
| VDS | Drain-source Voltage (VGS = 0) | 900 | V | |
| VDGR | Drain- gate Voltage (RGS = 20 kW) | 900 | V | |
| VGS | Gate-source Voltage | ± 30 | V | |
| ID | Drain Current (continuous) at Tc = 25 oC | 5 | 5(*) | A |
| ID | Drain Current (continuous) at Tc = 100 oC | 3.1 | 3.1(*) | A |
| IDM(•) | Drain Current (pulsed) | 20 | 20 | A |
| Ptot | Total Dissipation at Tc = 25 oC | 125 | 40 | W |
| Derating Factor | 1.0 | 0.32 | W/oC | |
| dv/dt (1) | Peak Diode Recovery voltage slope | 4.5 | 4.5 | V/ns |
| VISO | Insulat ion Withstand Voltage (DC) ' | - | 2000 | V |
| Ts tg | Storage Temperature | -65 to 150 | oC | |
| Tj Max | . Operating Junction Temperature | 150 | oC | |
(•) Pulse width limited by safe operating area
( 1) ISD 35 A di/dt 3 200 A/ms, VDD 3 V(BR)DSS, Tj 3 TJMAX
(*) Limited only by maximum temperature allowed
STP5NB90 Features
*TYPICAL RDS(on) = 2.3 W
* EXTREMELY HIGH dv/dt CAPABILITY
* 100% AVALANCHE TESTED
* VERY LOW INTRINSIC CAPACITANCES
* GATE CHARGE MINIMIZED
* EXTREMELY HIGH dv/dt CAPABILITY
* 100% AVALANCHE TESTED
* VERY LOW INTRINSIC CAPACITANCES
* GATE CHARGE MINIMIZED
STP5NB90 Typical Application
* HIGH CURRENT, HIGH SPEED SWITCHING
* UNINTERRUPTIBLE POWER SUPPLY(UPS)
* DC-DC & DC-AC CONVERTERS FOR TELECOM, INDUSTRIAL AND CONSUMER ENVIRONMENT
* UNINTERRUPTIBLE POWER SUPPLY(UPS)
* DC-DC & DC-AC CONVERTERS FOR TELECOM, INDUSTRIAL AND CONSUMER ENVIRONMENT
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