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STP60NE10FP, STP60NF03L-10, STP60NF06

Table of contents:
Info of STP60NE10FP
Info of STP60NF03L-10
Info of STP60NF06

STP60NE10FP, STP60NF03L-10, STP60NF06 Selling Leads, Datasheet

MFG:STMicroelectronics Category:Discrete Semiconductor Products Package Cooled:05+/06+ D/C:25000

STP60NE10FP, STP60NF03L-10, STP60NF06 Datasheet download

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Part Number: STP60NF06

Category: Discrete Semiconductor Products

MFG: STMicroelectronics

Package Cooled: 05+/06+

D/C: 25000

Description: MOSFET N-CH 60V 60A TO-220

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STP60NE10FP General Description

This Power MOSFET is the latest development of STMicroelectronics unique "Single Feature Size]" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

STP60NE10FP Maximum Ratings

Symbol	Parameter	Value		Unit
Symbol	Parameter	STP60NE10	STP60NE10FP	Unit
V_DS	Drain-source Voltage (V_GS = 0)	100		V
V_DGR	Drain- gate Voltage (R_GS = 20 k)	100		V
V_GS	Gate-source Voltage	±20		V
I_D	Drain Current (continuous) at T_c = 25	60	30	A
I_D	Drain Current (continuous) at T_c = 100	42	21	A
I_DM(`)	Drain Current (pulsed)	240	120	A
P_tot	Total Dissipation at T_c = 25	160	50	W
	Derating Factor	1.06	0.37	W/
V_ISO	Insulation Withstand Voltage (DC)	-	2000	V
dv/dt	Peak Diode Recovery voltage slope	7		V/ns
T_stg	Storage Temperature	-65 to 175		°C
T_j	Max. Operating Junction Temperature	175		°C

(•) Pulse width limited by safe operating area ( 1) I_SD 60 A, di/dt 300 A/ms, V_DD V(BR)D_SS, Tj T_JMAX

STP60NE10FP Features

TYPICAL R_DS(on) = 0.016
EXCEPTIONAL dv/dt CAPABILITY
100% AVALANCHE TESTED
APPLICATIONORIENTED CHARACTERIZATION

STP60NE10FP Typical Application

SOLENOID AND RELAY DRIVERS
MOTOR CONTROL, AUDIO AMPLIFIERS
DC-DC CONVERTERS
AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.)

STP60NF06 Parameters

Technical/Catalog Information	STP60NF06
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25° C	60A
Rds On (Max) @ Id, Vgs	16 mOhm @ 30A, 10V
Input Capacitance (Ciss) @ Vds	1660pF @ 25V
Power - Max	110W
Packaging	Tube
Gate Charge (Qg) @ Vgs	73nC @ 10V
Package / Case	TO-220-3 (Straight Leads)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	STP60NF06 STP60NF06 497 2779 5 ND 49727795ND 497-2779-5

STP60NF06 General Description

This Power Mosfet series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency isolated DC-DC converters for Telecom and Computer application. It is also intended for any application with low gate charge drive requirements.

STP60NF06 Maximum Ratings

Symbol	Parameter	Value		Unit
		STP60NF06	STP60NF06FP	V
V_DS	Drain-source Voltage (V_GS = 0)	60		V
V_DGR	Drain-gate Voltage (R_GS = 20 k)	60		V
V_GS	Gate- source Voltage	± 20		V
I_D	Drain Current (continuos) at T_C = 25°C	60	37	A
I_D	Drain Current (continuos) at T_C = 100°C	42	26	A
I_DM ()	Drain Current (pulsed)	240	148	A
P_TOT	Total Dissipation at T_C = 25°C	110	42	W
	Derating Factor	0.73	0.28	W/°C
dv/dt (1)	Peak Diode Recovery voltage slope			V/ns
V_ISO	Insulation Winthstand Voltage (DC)			V
	Storage Temperature			°C
	Max. Operating Junction Temperature			°C

STP60NF06 Typical Application

HIGH-EFFICIENCY DC-DC CONVERTERS
UPS AND MOTOR CONTROL
AUTOMOTIVE

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