MFG:STMicroelectronics Category:Discrete Semiconductor Products Package Cooled:N/A D/C:08+
STP6NK60ZFP-ST, STP6NK60ZP, STP6NM60N Datasheet download
Category: Discrete Semiconductor Products
MFG: STMicroelectronics
Package Cooled: N/A
D/C: 08+
Description: MOSFET N-CH 600V 4.6A TO-220
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PDF/DataSheet Download
Datasheet: STP04CM596B1R
File Size: 412025 KB
Manufacturer: STMicroelectronics
Download : Click here to Download
PDF/DataSheet Download
Datasheet: STP04CM596B1R
File Size: 412025 KB
Manufacturer: STMicroelectronics
Download : Click here to Download
PDF/DataSheet Download
Datasheet: STP04CM596B1R
File Size: 412025 KB
Manufacturer: STMicroelectronics
Download : Click here to Download
| Technical/Catalog Information | STP6NM60N |
| Vendor | STMicroelectronics |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 600V |
| Current - Continuous Drain (Id) @ 25° C | 4.6A |
| Rds On (Max) @ Id, Vgs | 920 mOhm @ 2.3A, 10V |
| Input Capacitance (Ciss) @ Vds | 420pF @ 50V |
| Power - Max | 45W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 13nC @ 10V |
| Package / Case | TO-220-3 (Straight Leads) |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | STP6NM60N STP6NM60N 497 7530 5 ND 49775305ND 497-7530-5 |
This device is realized with the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.
|
Symbol |
Parameter |
Value |
Unit | |
|
TO-220 DPAK/IPAK |
TO-220FP | |||
|
VDS |
Drain-source voltage (VGS=0) |
600 |
V | |
|
VGS |
Gate-source voltage |
± 25 |
V | |
|
ID |
Drain current (continuous) at TC = 25 |
4.6 |
4.6(1) |
A |
|
ID |
Drain current (continuous) at TC = 100 |
2.9 |
2.9(1) |
A |
|
IDM(2) |
Drain current (pulsed) |
18.4 |
18.4(1) |
A |
|
PTOT |
Total dissipation at TC = 25 |
45 |
20 |
A |
|
dv/dt (3) |
Peak diode recovery voltage slope |
15 |
V/ns | |
|
VISO |
Insulation withstand voltage (RMS) from all three leads to external heat sink (t=1s;TC=25) |
-- |
2500 |
V |
|
Tj,Tstg |
Operating junction temperature Storage temperature |
-55 to 150 |
||
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