STP75N75, STP75NE75, STP75NE75FP Selling Leads, Datasheet
MFG:ST Package Cooled:TO-220 D/C:09+
STP75N75, STP75NE75, STP75NE75FP Datasheet download
Part Number: STP75N75
MFG: ST
Package Cooled: TO-220
D/C: 09+
STP75N75, STP75NE75, STP75NE75FP
- Table of contents:
Info of STP75N75
Info of STP75NE75
Info of STP75NE75FP
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About STP04CM596B1R
PDF/DataSheet Download
Datasheet: STP04CM596B1R
File Size: 412025 KB
Manufacturer: STMicroelectronics
Download : Click here to Download
About STP75NE75
PDF/DataSheet Download
Datasheet: STP75NE75
File Size: 109280 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
About STP75NE75FP
PDF/DataSheet Download
Datasheet: STP75NE75FP
File Size: 109280 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
STP75NE75 General Description
This Power MOSFET is the latest development of STMicroelectronics unique "Single Feature SizeTM" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
STP75NE75 Maximum Ratings
| Symbol | Parameter | Value | Unit | |
| STP75NE75 | STP75NE75FP | |||
| VDS | Drain-source Voltage (VGS = 0) | 75 | V | |
| VDGR | Drain- gate Voltage (RGS = 20 k) | 75 | V | |
| VGS | Gate-source Voltage | ± 20 | V | |
| ID | Drain Current (continuous) at Tc = 25 | 75 | 40 | A |
| ID | Drain Current (continuous) at Tc = 100 | 63 | 28 | A |
| IDM(`) | Drain Current (pulsed) | 300 | 160 | A |
| Ptot | Total Dissipation at Tc = 25 | 160 | 50 | W |
| Derating Factor | 1.06 | 0.37 | W/ | |
| VISO | Insulation Withstand Voltage (DC) | - | 2000 | V |
| dv/dt | Peak Diode Recovery voltage slope | 7 | V/ns | |
| Tstg | Storage Temperature | -65 to 175 | ||
| Tj | Max. Operating Junction Temperature | 175 | ||
STP75NE75 Features
` TYPICAL RDS(on) = 0.01
` EXCEPTIONAL dv/dt CAPABILITY
` 100% AVALANCHE TESTED
` APPLICATIONORIENTED CHARACTERIZATION
` EXCEPTIONAL dv/dt CAPABILITY
` 100% AVALANCHE TESTED
` APPLICATIONORIENTED CHARACTERIZATION
STP75NE75 Typical Application
·SOLENOID AND RELAY DRIVERS
·DC MOTOR CONTROL, AUDIO AMPLIFIERS
·DC-DC CONVERTERS
·AUTOMOTIVE ENVIRONMENT
·DC MOTOR CONTROL, AUDIO AMPLIFIERS
·DC-DC CONVERTERS
·AUTOMOTIVE ENVIRONMENT
STP75NE75FP General Description
This Power MOSFET is the latest development of STMicroelectronics unique "Single Feature SizeTM" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
STP75NE75FP Maximum Ratings
| Symbol | Parameter | Value | Unit | |
| STP75NE75 | STP75NE75FP | |||
| VDS | Drain-source Voltage (VGS = 0) | 75 | V | |
| VDGR | Drain- gate Voltage (RGS = 20 k) | 75 | V | |
| VGS | Gate-source Voltage | ± 20 | V | |
| ID | Drain Current (continuous) at Tc = 25 | 75 | 40 | A |
| ID | Drain Current (continuous) at Tc = 100 | 63 | 28 | A |
| IDM(`) | Drain Current (pulsed) | 300 | 160 | A |
| Ptot | Total Dissipation at Tc = 25 | 160 | 50 | W |
| Derating Factor | 1.06 | 0.37 | W/ | |
| VISO | Insulation Withstand Voltage (DC) | - | 2000 | V |
| dv/dt | Peak Diode Recovery voltage slope | 7 | V/ns | |
| Tstg | Storage Temperature | -65 to 175 | ||
| Tj | Max. Operating Junction Temperature | 175 | ||
STP75NE75FP Features
` TYPICAL RDS(on) = 0.01
` EXCEPTIONAL dv/dt CAPABILITY
` 100% AVALANCHE TESTED
` APPLICATIONORIENTED CHARACTERIZATION
` EXCEPTIONAL dv/dt CAPABILITY
` 100% AVALANCHE TESTED
` APPLICATIONORIENTED CHARACTERIZATION
STP75NE75FP Typical Application
·SOLENOID AND RELAY DRIVERS
·DC MOTOR CONTROL, AUDIO AMPLIFIERS
·DC-DC CONVERTERS
·AUTOMOTIVE ENVIRONMENT
·DC MOTOR CONTROL, AUDIO AMPLIFIERS
·DC-DC CONVERTERS
·AUTOMOTIVE ENVIRONMENT
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