STP7N90, STP7NB20, STP7NB30FP Selling Leads, Datasheet
MFG:ST Package Cooled:TO-220 D/C:TO-220
STP7N90, STP7NB20, STP7NB30FP Datasheet download
Part Number: STP7N90
MFG: ST
Package Cooled: TO-220
D/C: TO-220
MFG:ST Package Cooled:TO-220 D/C:TO-220
STP7N90, STP7NB20, STP7NB30FP Datasheet download
MFG: ST
Package Cooled: TO-220
D/C: TO-220
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PDF/DataSheet Download
Datasheet: STP04CM596B1R
File Size: 412025 KB
Manufacturer: STMicroelectronics
Download : Click here to Download
PDF/DataSheet Download
Datasheet: STP04CM596B1R
File Size: 412025 KB
Manufacturer: STMicroelectronics
Download : Click here to Download
PDF/DataSheet Download
Datasheet: STP7NB30FP
File Size: 110889 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
Using the latest high voltage MESH OVERLAYTM process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company's proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.
Symbol |
Parameter |
Value |
Unit | |
STP7NB30 | STP7NB30FP | |||
VDS |
Drain-source Voltage (VGS = 0) |
300 |
V | |
VDGR |
Drain- gate Voltage(RGS = 20 k) |
300 |
V | |
VGS |
Gate-source Voltage |
± 30 |
V | |
ID |
Drain Current (continuous) at Tc = 25 oC |
7 |
4 |
A |
ID |
Drain Current (continuous) at Tc = 100 oC |
4.4 |
2.5 |
A |
IDM(•) |
Drain Current (pulsed) |
28 |
28 |
A |
Ptot |
Total Dissipation at Tc = 25 oC |
85 |
30 |
W |
Derating Factor |
0.68 |
0.24 |
W/oC | |
dv/dt (1) |
Peak Diode Recovery voltage slope |
5.5 |
5.5 |
V/ns |
VISO |
Insulation Withstand Voltage(DC) |
- |
2000 |
V |
Tstg |
Storage Temperature |
-65 to 150 |
oC | |
Tj |
Max. Operating Junction Temperature |
150 |
oC |