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This Power MOSFET is the latest development of STMicroelectronics unique " Single Feature SizeTM " strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
STP7NE10L Maximum Ratings
Symbol
Parameter
Value
Unit
VDS
Drain-source Voltage (VGS = 0)
100
V
VDGR
Drain- gate Voltage(RGS = 20 k)
100
V
VGS
Gate-source Voltage
±20
V
ID
Drain Current (continuous) at Tc = 25
7
A
ID
Drain Current (continuous) at Tc = 100
4.9
A
IDM(•)
Drain Current (pulsed)
28
A
Ptot
Total Dissipation at Tc = 25
45
W
Derating Factor
0.3
W/
dv/dt (1)
Peak Diode Recovery voltage slope
6
V/ns
Tstg
Storage Temperature
-65 to 150
Tj
Max. Operating Junction Temperature
175
STP7NE10L Typical Application
DC MOTOR CONTROL (DISK DRIVES,etc.) DC-DC & DC-AC CONVERTERS SYNCHRONOUS RECTIFICATION