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STP8NK85Z, STP8NM50, STP8NM50FP

Table of contents:
Info of STP8NK85Z
Info of STP8NM50
Info of STP8NM50FP

STP8NK85Z, STP8NM50, STP8NM50FP Selling Leads, Datasheet

MFG:STMicroelectronics Category:Discrete Semiconductor Products Package Cooled:TO-220 D/C:06+07+pb-free

STP8NK85Z, STP8NM50, STP8NM50FP Datasheet download

Five Points

Part Number: STP8NK85Z

Category: Discrete Semiconductor Products

MFG: STMicroelectronics

Package Cooled: TO-220

D/C: 06+07+pb-free

Description: MOSFET N-CH 550V 8A TO-220FP

Price Break

1
10
100
250
500
1000
2500

Unit Price

2.56000
2.40000
1.92000
1.44000
1.20000
1.10000
1.04000

Extended Price

2.56
24.00
192.00
360.00
600.00
1100.00
2600.00

(All prices are in USD) Prices for reference only

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STP8NK85Z Parameters

Technical/Catalog Information	STP8NK85Z
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	850V
Current - Continuous Drain (Id) @ 25° C	6.7A
Rds On (Max) @ Id, Vgs	1.4 Ohm @ 3.35A, 10V
Input Capacitance (Ciss) @ Vds	1870pF @ 25V
Power - Max	150W
Packaging	Tube
Gate Charge (Qg) @ Vgs	60nC @ 10V
Package / Case	TO-220-3 (Straight Leads)
FET Feature	Standard
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	STP8NK85Z STP8NK85Z 497 5205 5 ND 49752055ND 497-5205-5

STP8NM50 Parameters

Technical/Catalog Information	STP8NM50
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	550V
Current - Continuous Drain (Id) @ 25° C	8A
Rds On (Max) @ Id, Vgs	800 mOhm @ 2.5A, 10V
Input Capacitance (Ciss) @ Vds	415pF @ 25V
Power - Max	100W
Packaging	Tube
Gate Charge (Qg) @ Vgs	13nC @ 10V
Package / Case	TO-220-3 (Straight Leads)
FET Feature	Standard
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	STP8NM50 STP8NM50

STP8NM50 General Description

The MDmesh^TM is a new revolutionary MOSFET technology that associates the Multiple Drain pro-cess with the Company's PowerMESH^TM horizonta layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company's proprietary strip technique yields overal dynamic performance that is significantly better than that of similar competition's products.

STP8NM50 Maximum Ratings

Symbol	Parameter	Value		Unit
Symbol	Parameter	STP8NM50	STP8NM50FP	Unit
V_DS	Drain-source Voltage (V_GS = 0)	500		V
V_DGR	Drain-gate Voltage (R_GS = 20 )	500		V
V_GS	Gate- source Voltage	±30		V
I_D	Drain Current (continuous) at T_C = 25	5	5^(*)	A
I_D	Drain Current (continuous) at T_C = 100	3.1	3.1^(*)	A
I_DM(`)	Drain Current (pulsed)	20	20^(*)	A
P_TOT	Total Dissipation at T_C = 25	120	30	W
	Derating Factor	0.4		W/
dv/dt⁽¹⁾	Peak Diode Recovery voltage slope	15		V/ns
V_ISO	Insulation Withstand Voltage (DC)	-	2500	V
T_stg	Storage Temperature	-65 to 150
T_j	Max. Operating Junction Temperature	-65 to 150

STP8NM50 Features

`TYPICAL RDS (on) = 0.7
`HIGH dv/dt AND AVALANCHE CAPABILITIES
`100% AVALANCHE TESTED
`LOW INPUT CAPACITANCE AND GATE CHARGE
`LOW GATE INPUT RESISTANCE

STP8NM50 Typical Application

The MDmesh^TM family is very suitable for increasing power density of high voltage converters allowing system miniaturization and higher efficiencies.

STP8NM50FP Parameters

Technical/Catalog Information	STP8NM50FP
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	550V
Current - Continuous Drain (Id) @ 25° C	8A
Rds On (Max) @ Id, Vgs	800 mOhm @ 2.5A, 10V
Input Capacitance (Ciss) @ Vds	415pF @ 25V
Power - Max	25W
Packaging	Tube
Gate Charge (Qg) @ Vgs	13nC @ 10V
Package / Case	TO-220-3 Full Pack (Straight Leads)
FET Feature	Standard
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	STP8NM50FP STP8NM50FP 497 5396 5 ND 49753965ND 497-5396-5

STP8NM50FP General Description

STP8NM50FP Maximum Ratings

Symbol	Parameter	Value		Unit
Symbol	Parameter	STP8NM50	STP8NM50FP	Unit
V_DS	Drain-source Voltage (V_GS = 0)	500		V
V_DGR	Drain-gate Voltage (R_GS = 20 )	500		V
V_GS	Gate- source Voltage	±30		V
I_D	Drain Current (continuous) at T_C = 25	5	5^(*)	A
I_D	Drain Current (continuous) at T_C = 100	3.1	3.1^(*)	A
I_DM(`)	Drain Current (pulsed)	20	20^(*)	A
P_TOT	Total Dissipation at T_C = 25	120	30	W
	Derating Factor	0.4		W/
dv/dt⁽¹⁾	Peak Diode Recovery voltage slope	15		V/ns
V_ISO	Insulation Withstand Voltage (DC)	-	2500	V
T_stg	Storage Temperature	-65 to 150
T_j	Max. Operating Junction Temperature	-65 to 150

STP8NM50FP Features

`TYPICAL RDS (on) = 0.7
`HIGH dv/dt AND AVALANCHE CAPABILITIES
`100% AVALANCHE TESTED
`LOW INPUT CAPACITANCE AND GATE CHARGE
`LOW GATE INPUT RESISTANCE

STP8NM50FP Typical Application

The MDmesh^TM family is very suitable for increasing power density of high voltage converters allowing system miniaturization and higher efficiencies.

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