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Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performance. The new patented STrip layout coupled with the Company's proprietary edge termination structure, makes it suitable in coverters for lighting applications.
STP8NS25 Maximum Ratings
Symbol
Parameter
Value
Unit
STP8NS25
STP8NS25FP
VDS
Drain-source Voltage (VGS = 0)
250
V
VDGR
Drain- gate Voltage(RGS = 20 k)
250
V
VGS
Gate-source Voltage
± 30
V
ID
Drain Current (continuous) at Tc = 25 oC
8
8(*)
A
ID
Drain Current (continuous) at Tc = 100 oC
5
5(*)
A
IDM (`)
Drain Current (pulsed)
32
32(*)
A
Ptot
Total Dissipation at Tc = 25 oC
80
30
W
Derating Factor
0.64
0.25
W/oC
dv/dt (1)
Peak Diode Recovery voltage slope
5
V/ns
VISO
Insulation Withstand Voltage(DC)
-
2000
V
Tstg
Storage Temperature
-65 to 150
oC
Tj
Max. Operating Junction Temperature
150
oC
STP8NS25 Typical Application
HIGH CURRENT, HIGH SPEED SWITCHING SWITH MODE POWER SUPPLIES (SMPS) DC-DC CONVERTERS FOR TELECOM, INDUSTRIAL, AND LIGHTING EQUIPMENT
STP8NS25FP Parameters
Technical/Catalog Information
STP8NS25FP
Vendor
STMicroelectronics
Category
Discrete Semiconductor Products
Mounting Type
Through Hole
FET Polarity
N-Channel
Drain to Source Voltage (Vdss)
250V
Current - Continuous Drain (Id) @ 25° C
8A
Rds On (Max) @ Id, Vgs
450 mOhm @ 4A, 10V
Input Capacitance (Ciss) @ Vds
770pF @ 25V
Power - Max
30W
Packaging
Tube
Gate Charge (Qg) @ Vgs
51.8nC @ 10V
Package / Case
TO-220FP
FET Feature
Standard
Lead Free Status
Lead Free
RoHS Status
RoHS Compliant
Other Names
STP8NS25FP STP8NS25FP
STP8NS25FP General Description
Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performance. The new patented STrip layout coupled with the Company's proprietary edge termination structure, makes it suitable in coverters for lighting applications.
STP8NS25FP Maximum Ratings
Symbol
Parameter
Value
Unit
STP8NS25
STP8NS25FP
VDS
Drain-source Voltage (VGS = 0)
250
V
VDGR
Drain- gate Voltage(RGS = 20 k)
250
V
VGS
Gate-source Voltage
± 30
V
ID
Drain Current (continuous) at Tc = 25 oC
8
8(*)
A
ID
Drain Current (continuous) at Tc = 100 oC
5
5(*)
A
IDM (`)
Drain Current (pulsed)
32
32(*)
A
Ptot
Total Dissipation at Tc = 25 oC
80
30
W
Derating Factor
0.64
0.25
W/oC
dv/dt (1)
Peak Diode Recovery voltage slope
5
V/ns
VISO
Insulation Withstand Voltage(DC)
-
2000
V
Tstg
Storage Temperature
-65 to 150
oC
Tj
Max. Operating Junction Temperature
150
oC
STP8NS25FP Typical Application
HIGH CURRENT, HIGH SPEED SWITCHING SWITH MODE POWER SUPPLIES (SMPS) DC-DC CONVERTERS FOR TELECOM, INDUSTRIAL, AND LIGHTING EQUIPMENT
This application specific Power Mosfet is the third generation of STMicroelectronics unique "Single Feature Size™" strip-based process. The resulting transistor shows the best trade-off between on-resistance and gate charge. When used as high and low side in buck regulators, it gives the best performance in terms of both conduction and switching losses. This is extremely important for motherboards where fast switching and high efficiency are of paramount importance.
STP90NF03L Maximum Ratings
Symbol
Parameter
Value
Unit
VDS
Drain-source Voltage (VGS = 0)
30
V
VDGR
Drain-gate Voltage (RGS = 20 k)
30
V
VGS
Gate- source Voltage
± 20
V
ID
Drain Current (continuos) at TC = 25°C
90
A
ID
Drain Current (continuos) at TC = 100°C
65
A
IDM ()
Drain Current (pulsed)
360
A
PTOT
Total Dissipation at TC = 25°C
150
W
Derating Factor
0.73
W/°C
Tstg
Storage Temperature
55 to 175
°C
Tj
Max. Operating Junction Temperature
175
°C
STP90NF03L Typical Application
SPECIFICALLY DESIGNED AND OPTIMISED FOR HIGH EFFICIENCY CPU CORE DC/DC CONVERTERS
