STP9N30, STP9N850FP, STP9NA50 Selling Leads, Datasheet
MFG:ST Package Cooled:TO-220 D/C:03+
STP9N30, STP9N850FP, STP9NA50 Datasheet download
Part Number: STP9N30
MFG: ST
Package Cooled: TO-220
D/C: 03+
MFG:ST Package Cooled:TO-220 D/C:03+
STP9N30, STP9N850FP, STP9NA50 Datasheet download
MFG: ST
Package Cooled: TO-220
D/C: 03+
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PDF/DataSheet Download
Datasheet: STP04CM596B1R
File Size: 412025 KB
Manufacturer: STMicroelectronics
Download : Click here to Download
PDF/DataSheet Download
Datasheet: STP04CM596B1R
File Size: 412025 KB
Manufacturer: STMicroelectronics
Download : Click here to Download
PDF/DataSheet Download
Datasheet: STP9NA50
File Size: 202687 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance.
Symbol |
Parameter |
Value |
Unit |
VDS |
Drain-sourceVoltage(VGS =0) |
500 |
V |
VDGR |
Drain-gateVoltage(RGS =20k) |
500 |
V |
VGS |
Gate-sourceVoltage |
±30 |
V |
ID |
DrainCurrent(continuous)atTc =25 |
8.8 |
A |
ID |
Drain Current(continuous)atTc =100 |
5.5 |
A |
IDM(`) |
Drain Current(pulsed) |
35 |
A |
Ptot |
Total DissipationatT =25 |
125 |
W |
Derating Factor |
1 |
W/ | |
VISO |
InsulationWithstandVoltage(DC) |
- |
V |
Tstg |
Storage Temperature |
-65 to1 50 |
|
Tj |
Max.Operating Junction Temperature |
150 |
TYPE |
VDSS |
RDS(on) |
ID |
STP9NA50 |
500 V |
< 0.8 |
8.8 A |