STP9NA50FI, STP9NB50, STP9NB50FP Selling Leads, Datasheet
MFG:ST Package Cooled:TO-220 D/C:06+
STP9NA50FI, STP9NB50, STP9NB50FP Datasheet download
Part Number: STP9NA50FI
MFG: ST
Package Cooled: TO-220
D/C: 06+
STP9NA50FI, STP9NB50, STP9NB50FP
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Info of STP9NA50FI
Info of STP9NB50
Info of STP9NB50FP
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About STP9NA50FI
PDF/DataSheet Download
Datasheet: STP9NA50FI
File Size: 202687 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
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About STP9NB50
PDF/DataSheet Download
Datasheet: STP9NB50
File Size: 111017 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
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About STP9NB50FP
PDF/DataSheet Download
Datasheet: STP9NB50FP
File Size: 111017 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
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STP9NA50FI General Description
This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance.
STP9NA50FI Maximum Ratings
|
Symbol |
Parameter |
Value |
Unit |
|
VDS |
Drain-sourceVoltage(VGS =0) |
500 |
V |
|
VDGR |
Drain-gateVoltage(RGS =20k) |
500 |
V |
|
VGS |
Gate-sourceVoltage |
±30 |
V |
|
ID |
DrainCurrent(continuous)atTc =25 |
5 |
A |
|
ID |
Drain Current(continuous)atTc =100 |
3.1 |
A |
|
IDM(`) |
Drain Current(pulsed) |
35 |
A |
|
Ptot |
Total DissipationatT =25 |
45 |
W |
| Derating Factor |
0.36 |
W/ | |
|
VISO |
InsulationWithstandVoltage(DC) |
2000 |
V |
|
Tstg |
Storage Temperature |
-65 to1 50 |
|
|
Tj |
Max.Operating Junction Temperature |
150 |
(•) Pulse width limited by safe operating area
STP9NA50FI Features
|
TYPE |
VDSS |
RDS(on) |
ID |
| STP9NA50FI |
500 V |
< 0.8 |
5 A |
` TYPICAL RDS(on) = 0.7
` ± 30V GATE TO SOURCE VOLTAGE RATING
` 100% AVALANCHE TESTED
` REPETITIVE AVALANCHE DATA AT 100
` LOW INTRINSIC CAPACITANCES
` GATE GHARGE MINIMIZED
` REDUCED THRESHOLD VOLTAGE SPREAD
STP9NA50FI Typical Application
· HIGH CURRENT, HIGH SPEED SWITCHING
· SWITCH MODE POWERSUPPLIES (SMPS)
· DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE
· SWITCH MODE POWERSUPPLIES (SMPS)
· DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE
STP9NB50 General Description
Using the latest high voltage MESH OVERLAY] process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company's proprieraty edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.
STP9NB50 Maximum Ratings
|
Symbol |
Parameter |
Value |
Units |
|
VDS |
Drain-source Voltage (VGS = 0) |
500 |
V |
|
VDGR |
Drain- gate Voltage (RGS = 20 k) |
500 |
V |
|
VGS |
Gate-source Voltage |
±30 |
V |
|
ID |
Drain Current (continuous) at Tc = 25 |
8.6 |
A |
|
ID |
Drain Current (continuous) at Tc = 100 |
5.4 |
A |
|
IDM(•) |
Drain Current (pulsed) |
34.4 |
A |
|
Ptot |
Total Dissipation at Tc = 25 |
125 |
W |
| Derating Factor |
1 |
W/ | |
|
dv/dt (1) |
Peak Diode Recovery voltage slope |
4.5 |
V/ns |
|
VISO |
Insulat ion Withstand Voltage (DC) |
- |
|
|
Tstg |
Storage Temperature |
-65 to +150 |
|
|
Tj |
Max. Operating Junction Temperature |
150 |
(•)Pulse width limited by safe operating area
(1)ISD<9A, di/dt<200A/, VDD<V(BR)DSS,TJ<TJMAX
STP9NB50 Features
|
TYPE |
VDSS |
RDS(on) |
ID |
| STP9NB50 |
500 V |
< 0.85 |
8.6 A |
` TYPICAL RDS(on) = 0.75
` EXTREMELY HIGH dv/dt CAPABILITY
` 100% AVALANCHE TESTED
` VERY LOW INTRINSIC CAPACITANCES
` GATE CHARGE MINIMIZED
STP9NB50 Typical Application
·HIGH CURRENT, HIGH SPEED SWITCHING
·SWITH MODE POWER SUPPLIES (SMPS)
·DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE
·SWITH MODE POWER SUPPLIES (SMPS)
·DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE
STP9NB50FP General Description
Using the latest high voltage MESH OVERLAY] process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company's proprieraty edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.
STP9NB50FP Maximum Ratings
|
Symbol |
Parameter |
Value |
Units |
|
VDS |
Drain-source Voltage (VGS = 0) |
500 |
V |
|
VDGR |
Drain- gate Voltage (RGS = 20 k) |
500 |
V |
|
VGS |
Gate-source Voltage |
±30 |
V |
|
ID |
Drain Current (continuous) at Tc = 25 |
4.9 |
A |
|
ID |
Drain Current (continuous) at Tc = 100 |
3.1 |
A |
|
IDM(•) |
Drain Current (pulsed) |
34.4 |
A |
|
Ptot |
Total Dissipation at Tc = 25 |
40 |
W |
| Derating Factor |
0.32 |
W/ | |
|
dv/dt (1) |
Peak Diode Recovery voltage slope |
4.5 |
V/ns |
|
VISO |
Insulat ion Withstand Voltage (DC) |
2000 |
|
|
Tstg |
Storage Temperature |
-65 to +150 |
|
|
Tj |
Max. Operating Junction Temperature |
150 |
(•)Pulse width limited by safe operating area
(1)ISD<9A, di/dt<200A/, VDD<V(BR)DSS,TJ<TJMAX
STP9NB50FP Features
|
TYPE |
VDSS |
RDS(on) |
ID |
| STP9NB50FP |
500 V |
< 0.85 |
4.9 A |
` TYPICAL RDS(on) = 0.75
` EXTREMELY HIGH dv/dt CAPABILITY
` 100% AVALANCHE TESTED
` VERY LOW INTRINSIC CAPACITANCES
` GATE CHARGE MINIMIZED
STP9NB50FP Typical Application
·HIGH CURRENT, HIGH SPEED SWITCHING
·SWITH MODE POWER SUPPLIES (SMPS)
·DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE
·SWITH MODE POWER SUPPLIES (SMPS)
·DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE
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