MFG:STMicroelectronics Category:Discrete Semiconductor Products Package Cooled:TO-263 D/C:06+
STP9NK60, STP9NK60FP, STP9NK60Z Datasheet download
Category: Discrete Semiconductor Products
MFG: STMicroelectronics
Package Cooled: TO-263
D/C: 06+
Description: MOSFET N-CH 600V 7A TO-220
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Datasheet: STP9NK60Z
File Size: 438654 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
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PDF/DataSheet Download
Datasheet: STP04CM596B1R
File Size: 412025 KB
Manufacturer: STMicroelectronics
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PDF/DataSheet Download
Datasheet: STP9NK60Z
File Size: 438654 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
| Technical/Catalog Information | STP9NK60Z |
| Vendor | STMicroelectronics |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 600V |
| Current - Continuous Drain (Id) @ 25° C | 7A |
| Rds On (Max) @ Id, Vgs | 950 mOhm @ 3.5A, 10V |
| Input Capacitance (Ciss) @ Vds | 1110pF @ 25V |
| Power - Max | 125W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 53nC @ 10V |
| Package / Case | TO-220-3 (Straight Leads) |
| FET Feature | Standard |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | STP9NK60Z STP9NK60Z |
The SuperMESH™ series is obtained through an extreme optimization of ST's well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is tak-en to ensure a very good dv/dt capability for the most demanding applications. Such series comple-ments ST full range of high voltage MOSFETs in-cluding revolutionary MDmesh™ products.
|
Symbol |
Parameter |
Value |
Unit | |
|---|---|---|---|---|
| TO-220 / D2PAK / I2PAK |
TO-220FP | |||
|
VDS |
Drain-source Voltage (VGS = 0) |
600 |
V | |
|
VDGR |
Drain-gate Voltage (RGS = 20 kΩ) |
600 |
V | |
|
VGS |
Gate- source Voltage |
± 30 |
V | |
|
ID |
Drain Current (continuous)at TC =25 |
7 |
7(*) |
A |
|
ID |
Drain Current (continuous)at TC =100 |
4.4 |
4.4(*) |
A |
|
IDM () |
Drain Current (pulsed) |
28 |
28(*) |
A |
|
PTOT |
Total Dissipation at TC = 25 |
125 |
30 |
W |
|
Derating Factor |
1 |
0.24 |
W/ | |
|
VESD(G-S) |
Gate source ESD(HBM-C=100pF, R=1.5KΩ) |
4000 |
V | |
|
dv/dt (1) |
Peak Diode Recovery voltage slope |
4.5 |
V /ns | |
|
VISO |
Insulation Withstand Voltage (DC) |
- |
2500 |
V |
|
Tj Tstg |
Operating Junction Temperature Storage Temperature |
55 to 150 55 to 150 |
| |
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