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STP9NK60ZD, STP9NK60ZFP, STP9NK65Z

Table of contents:
Info of STP9NK60ZD
Info of STP9NK60ZFP
Info of STP9NK65Z

STP9NK60ZD, STP9NK60ZFP, STP9NK65Z Selling Leads, Datasheet

MFG:STMicroelectronics Category:Discrete Semiconductor Products Package Cooled:TO 220 AB NON ISOL D/C:06+07+pb-free

STP9NK60ZD, STP9NK60ZFP, STP9NK65Z Datasheet download

Five Points

Part Number: STP9NK60ZD

Category: Discrete Semiconductor Products

MFG: STMicroelectronics

Package Cooled: TO 220 AB NON ISOL

D/C: 06+07+pb-free

Description: MOSFET N-CH 650V 6.4A TO-220

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STP9NK60ZD Parameters

Technical/Catalog Information	STP9NK60ZD
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25° C	7A
Rds On (Max) @ Id, Vgs	950 mOhm @ 3.5A, 10V
Input Capacitance (Ciss) @ Vds	1110pF @ 25V
Power - Max	125W
Packaging	Tube
Gate Charge (Qg) @ Vgs	53nC @ 10V
Package / Case	TO-220-3 (Straight Leads)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	STP9NK60ZD STP9NK60ZD 497 4387 5 ND 49743875ND 497-4387-5

STP9NK60ZD General Description

The SuperFREDMesh™ series associates all ad-vantages of reduced on-resistance, zener gate pro-tection and very high dv/dt capability with a Fast body-drain recovery diode. Such series comple-ments the "FDmesh™" Advanced Technology.

STP9NK60ZD Maximum Ratings

Symbol	Parameter	Value		Unit
Symbol	Parameter	TO-220 / D2PAK	TO-220FP	Unit
V_DS	Drain-source Voltage (VGS = 0)	600		V
V_DGR	Drain-gate Voltage (RGS = 20 kΩ)	600		V
V_GS	Gate- source Voltage	± 30		V
I_D	Drain Current (continuous)at TC =25	7.0	7.0*)	A
I_D	Drain Current (continuous)at TC =100	4.3	4.3(*)	A
IDM ₍₎	Drain Current (pulsed)	28	28(*)	A
P_TOT	Total Dissipation at TC = 25	125	30	W
	Derating Factor	1	0.24	W/
V_ESD(G-S)	Gate source ESD(HBM-C=100pF, R=1.5KΩ)	4000		V
dv/dt (1)	Peak Diode Recovery voltage slope	15		V /ns
V_ISO	Insulation Withstand Voltage (DC)	-	2500	V
T_j T_stg	Operating Junction Temperature Storage Temperature	-55 to 150

STP9NK60ZD Features

YPICAL RDS(on) = 0.85 Ω
ERY HIGH dv/dt CAPABILITY
00% AVALANCHE TESTED
ATE CHARGE MINIMIZED
OW INTRINSIC CAPACITANCES
AST INTERNAL RECOVERY DIODE

STP9NK60ZD Typical Application

ID BALLAST
VS PHASE-SHIFT FULL BRIDGE
CONVERTERS

STP9NK65Z Parameters

Technical/Catalog Information	STP9NK65Z
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	650V
Current - Continuous Drain (Id) @ 25° C	6.4A
Rds On (Max) @ Id, Vgs	1.2 Ohm @ 3.2A, 10V
Input Capacitance (Ciss) @ Vds	1145pF @ 25V
Power - Max	125W
Packaging	Tube
Gate Charge (Qg) @ Vgs	41nC @ 10V
Package / Case	TO-220-3 (Straight Leads)
FET Feature	Standard
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	STP9NK65Z STP9NK65Z

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