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STPR805DF, STPR806D, STPR810DB

STPR805DF, STPR806D, STPR810DB Selling Leads, Datasheet

MFG:ST  Package Cooled:9800  D/C:TO

STPR805DF, STPR806D, STPR810DB Picture

STPR805DF, STPR806D, STPR810DB Datasheet download

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Part Number: STPR805DF

 

MFG: ST

Package Cooled: 9800

D/C: TO

 

 

 
 
 
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  • STP02

  • Vendor: SAMSUNG Pack: QFP D/C: 06+& Qty: 100 Note: New original stock  Adddate: 2026-06-17
  • Inquire Now
  • SHENZHEN SHI KEN ELECTRONICS   China
    Contact: Mr.lin   MSN:skyline.dk@msn.com
    Tel: 86-755-83030307
    Fax: 86-755-83030408
    (6)

About STPR805DF

PDF/DataSheet Download

Datasheet: STPR805DF

File Size: 48915 KB

Manufacturer: DIODES [Diodes Incorporated]

Download : Click here to Download

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STPR806D Suppliers

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  • STP02

  • Vendor: SAMSUNG Pack: QFP D/C: 06+& Qty: 100 Note: New original stock  Adddate: 2026-06-17
  • Inquire Now
  • SHENZHEN SHI KEN ELECTRONICS   China
    Contact: Mr.lin   MSN:skyline.dk@msn.com
    Tel: 86-755-83030307
    Fax: 86-755-83030408
    (6)

About STPR806D

PDF/DataSheet Download

Datasheet: STPR806D

File Size: 78412 KB

Manufacturer: ETC [ETC]

Download : Click here to Download

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STPR810DB Suppliers

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  • STP02

  • Vendor: SAMSUNG Pack: QFP D/C: 06+& Qty: 100 Note: New original stock  Adddate: 2026-06-17
  • Inquire Now
  • SHENZHEN SHI KEN ELECTRONICS   China
    Contact: Mr.lin   MSN:skyline.dk@msn.com
    Tel: 86-755-83030307
    Fax: 86-755-83030408
    (6)

About STPR810DB

PDF/DataSheet Download

Datasheet: STPR810DB

File Size: 74357 KB

Manufacturer: DIODES [Diodes Incorporated]

Download : Click here to Download

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STPR805DF Maximum Ratings

Characteristic
Symbol
STPR
805DF
STPR
810DF
STPR
815DF
STPR
820DF
STPR
830DF
STPR
840DF
STPR
850DF
STPR
860DF
Unit
Maximum Recurrent Peak Reverse Voltage
VRRM

50
100
150
200
300
400
500
600
Volts
Maximum RMS Voltage
VRWM
35
70
105
14
210
280
350
420
Volts
Maximum DC Blocking Voltage
VDC
50
100
150
200
300
400
500
600
Volts
Maximum Average Forward
Rectified Current @TC=100
I(AV)
8
mAmps
Peak forward surge current
8.3mS single half sine-wave superimposed
on rated load (MIL-STD-750D 4066 method)
IFSM
125
Amps
Maximum instantaneous forward voltage at8.0A DC          
VF
0.95
1.3
1.5
Volts
Maximum DC Reverse Current  @ TJ= 25
at rated DC blocking voltage @ TJ= 100
IR
5
500
A
Typical Junction Capacitance (Note 1)
CJ
110
60
Maximum reverse recovery time (Note 2)
TRR
35
50
ns
Typical junction capacitance (Note 3)
Cj
2.5
pF
Operating and storage temperature range
Tj, TSTG
-55to +150
NOTES :1.Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
2.Reverse Recovery Test Conditions:IF=0.5A,IR=1.0A,IRR 0.25A.
3.Thermal Resistance Junction to Case.

STPR805DF Features

·Glass passivated chip
·Superfast switching time for high efficiency
·Low forward voltage drop and high current capability
·Low reverse leakage current
·High surge capacity
·Plastic package has UL flammability classification 94V-0

STPR806D Maximum Ratings

Symbol
Characteristics
Maximum Ratings
Unit
I (AV)
Maximum Average Forward Rectified Current     @TC=100
8.0
A
IFSM
Peak Forward Surge Current 8.3ms Single Half-Sine-Wave
Superimposed On Rated Load (JEDEC METHOD)
100
A
V F(MAX)
Maximum Forward Voltage         @TJ=25
At 8.0A DC                                 @TJ=125
1.75
1.4
V
IR
Maximum DC Reverse Current          @TJ=25
At Rated DC Blocking Voltage           @TJ=125
5
200
A
CJ
Typical Junction Capacitance (Note 1)
60
pF
TRR
Maximum Reverse Recovery Time (Note 2)
25
ns
RJC
Typical Thermal Resistance (Note 3)
2.5
/W
TJ,TSTG
Operating And Storage Temperature Range
-55 to +150
NOTES: 1. Measured At 1.0MHz And Applied Reverse Voltage Of 4.0V DC.
             2. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A.
             3. Thermal Resistance Junction To Case.

STPR806D Features

* Power factor correction function
* Glass passivated chip
* Superfast switching time for high efficiency
* Low forward voltage drop and high current capability
* Low reverse leakage current
* High surge capacity

STPR810DB Maximum Ratings

Characteristic
Symbol
STPR805DB
STPR810DB
STPR815DB
STPR820DB
Unit
Maximum Recurrent Peak Reverse Voltage
VRRM

50
100
150
200
V
Maximum RMS Voltage
VRWM
35
70
105
140
V
Maximum DC Blocking Voltage
VDC
50
100
150
200
V
Maximum Average Forward
Rectified Current)               @ TA = 60
IO
8
A
Peak Forward Surge Current
8.3ms single half-sine-wave
superimposed on rated load (JEDEC Metod)
IFSM
100
A
Maximum Forward @ TJ= 25
Voltage IF=8A    @ TJ= 25              
VFM
1.3
0.8
V
Maximum DC Reverse Current   @ TJ= 25
at Peak Reverse Voltage @ TJ= 25
IRM
10
150
A
Typical Junction
Capacitance (Note 1)
Cj
45
pF
Maximum Reverse Recovery Time (Note 2)
TRR
25
ns
Typical Thermal Resistance (Note 3)
RJA
3.0
/W
Operating and Storage Temperature Range
Tj, TSTG
-55 to +150
NOTES :1.Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
2.Reverse Recovery Test Conditions:IF=0.5A,IR=1.0A ,IRR 0.25A.
3.Thermal Resistance Junction to Case.

STPR810DB Features

·Glass passivated chip
·Superfast switching time for high efficiency
·Low forward voltage drop and high current capability
·Low reverse leakage current
·High surge capacity
·Plastic package has UL flammability classification 94V-0

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