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Schottky barrier rectifier designed for high frequency miniature Switched Mode Power Supplies such as adaptators and on board DC/DC converters. Packaged in TO-220AB, TO-220FPAB, D2PAK and I2PAK.
STPS10H100CT Maximum Ratings
Symbol
Parameter
Value
Unit
VRRM
Repetitive peak reverse voltage
100
V
IF(RMS)
RMS forward current
10
A
IF(AV)
Average forward current d = 0.5
TO-220AB D2PAK / I2PAK
Tc = 165
per diode per device
5 10
A
TO-220FPAB
Tc = 160
IFSM
Surge non repetitive forward current
tp = 10 ms sinusoidal
180
A
IRRM
Repetitive peak reverse current
tp = 2 µs square F = 1kHz
1
A
PARM
Repetitive peak avalanche power
tp = 1µs Tj = 25
7200
W
Tstg
Storage temperature range
- 65 to + 175
Tj
Maximum operating junction temperature *
175
dV/dt
Critical rate of rise of reverse voltage
10000
V/µs
STPS10H100CT Features
·HIGH JUNCTION TEMPERATURE CAPABILITY FOR CONVERTERS LOCATED IN CONFINED ENVIRONMENT ·LOW LEAKAGE CURRENT AT HIGH TEMPERATURE ·LOW STATIC AND DYNAMIC LOSSES AS A RESULT OF THE SCHOTTKY BARRIER ·AVALANCHE CAPABILITY SPECIFIED
Single Schottky rectifier suited to Switched Mode Power Supplies and high frequency DC to DC converters.
This device is especially intended for use as a rectifier at the secondary of 3.3V SMPS units.
STPS10L25D Maximum Ratings
Symbol
Parameter
Value
Unit
VRRM
Repetitive peak reverse voltage
25
V
IF(RMS)
RMS forward current
30
A
IF(AV)
Average forward current
Tc = 140°C d = 0.5
10
A
IFSM
Surge non repetitive forward current
tp = 10 ms Sinusoidal
200
A
IRRM
Repetitive peak reverse current
tp=2 ms square F=1kHz
1
A
IRSM
Non repetitive peak reverse current
tp = 100 ms square
3
A
Tstg
Storage temperature range
- 65 to + 150
°C
Tj
Maximum operating junction temperature *
150
°C
dV/dt
Critical rate of rise of reverse voltage
10000
V/ms
STPS10L25D Features
VERY LOW FORWARD VOLTAGE DROP FOR LESS POWER DISSIPATION OPTIMIZED CONDUCTION / REVERSE LOSSES TRADE-OFF WHICH MEANS THE HIGHEST EFFICIENCY IN THE APPLICATIONS