Package Cooled: D2PAK; TO 220 AB NON ISOL; TO 220 ISOL FULL PACK 0
D/C: 06+07+pb-free
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Dual center tap Schottky rectifiers suited for Switched Mode Power Supplies and high frequencyDC to DCconverters.
Packaged in TO-220AB, ISOWATT220AB and D2PAK, these devices are intended for use in low voltage, high frequency inverters, free-wheeling and polarity protection applications.
STPS10L40CF Maximum Ratings
Symbol
Parameter
Value
Unit
VRRM
Repetitive peak reverse voltage
40
V
IF(RMS)
RMSforward current
20
A
IF(AV)
Average forward current
Tc = 135°C = 0.5
Per diode Per device
5 10
A
IFSM
Surge non repetitive forward current
tp = 10s Sinusoidal
150
A
IRRM
Repetitive peak reverse current
tp=2 s squareF=1kHz
1
A
IRSM
Non repetitive peak reverse current
tp = 100 s square
2
A
Tstg
Storage temperaturerange
- 65 to + 150
Tj
Maximumoperating junction temperature *
150
dV/dt
Critical rate of rise of reverse voltage
10000
V/s
STPS10L40CF Features
LOW FORWARD VOLTAGE DROP MEANING VERYSMALLCONDUCTION LOSSES LOW DYNAMIC LOSSES AS A RESULT OF THE SCHOTTKYBARRIER AVALANCHERATED
STPS10L40CFP General Description
Dual center tap Schottky rectifiers suited for Switched Mode Power Supplies and high frequency DC to DC converters.
Packaged in TO-220AB, ISOWATT220AB, TO-220FPAB and D2PAK, these devices are intended for use in low voltage, high frequency inverters, free-wheeling and polarity protection applications.
STPS10L40CFP Maximum Ratings
Symbol
Parameter
Value
Unit
VRRM
Repetitive peak reverse voltage
40
V
IF(RMS)
RMS forward current
20
A
IF(AV)
Average forward current
TO-220AB D2PAK
Tc = 135 = 0.5
Per diode Per device
5 10
A
ISOWATT220AB TO-220FPAB
Tc = 115 = 0.5
Per diode Per device
5 10
A
IFSM
Surge non repetitive forward current
tp =10 ms sinusoidal
150
A
IRRM
Peak repetitive reverse current
tp=2 µs square F=1kHz
1
A
IRSM
Non repetitive peak reverse current
tp = 100µ ssquare
2
A
PARM
Repetitive peak avalanche power
tp = 1µs Tj = 25
2700
W
Tstg
storage temperature range
- 65 to +150
Tj
Maximum operating junction temperature *
150
dV/dt
Critical rate of rise of reverse voltage
10000
V/µs
* :dPtot 1 dTj < (Rth j a-) thermal runaway condition for a diode on its own heatsink
STPS10L40CFP Features
· LOW FORWARD VOLTAGE DROP MEANING VERY SMALL CONDUCTION LOSSES · LOW DYNAMIC LOSSES AS A RESULT OF THE SCHOTTKY BARRIER · INSULATED PACKAGE: ISOWATT220AB, TO-220FPAB Insulating voltage = 2000V DC Capacitance = 12pF · AVALANCHE CAPABILITY SPECIFIED