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STPS8H100G, STPS8H100G-1, STPS8H100G-TR

STPS8H100G, STPS8H100G-1, STPS8H100G-TR Selling Leads, Datasheet

MFG:STMicroelectronics (VA)  Category:Discrete Semiconductor Products  Package Cooled:2005+  D/C:dc00+

STPS8H100G Picture

STPS8H100G, STPS8H100G-1, STPS8H100G-TR Datasheet download

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Part Number: STPS8H100G

Category: Discrete Semiconductor Products

MFG: STMicroelectronics (VA)

Package Cooled: 2005+

D/C: dc00+

Description: DIODE SCHOTTKY 8A 100V D2PAK

 

 
 
 
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  • STP02

  • Vendor: SAMSUNG Pack: QFP D/C: 06+& Qty: 100 Note: New original stock  Adddate: 2026-08-22
  • Inquire Now
  • SHENZHEN SHI KEN ELECTRONICS   China
    Contact: Mr.lin   MSN:skyline.dk@msn.com
    Tel: 86-755-83030307
    Fax: 86-755-83030408
    (6)

About STPS8H100G

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Datasheet: STPS8H100G

File Size: 95616 KB

Manufacturer: STMICROELECTRONICS [STMicroelectronics]

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  • STP02

  • Vendor: SAMSUNG Pack: QFP D/C: 06+& Qty: 100 Note: New original stock  Adddate: 2026-08-22
  • Inquire Now
  • SHENZHEN SHI KEN ELECTRONICS   China
    Contact: Mr.lin   MSN:skyline.dk@msn.com
    Tel: 86-755-83030307
    Fax: 86-755-83030408
    (6)

About STPS8H100G-1

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Datasheet: STPS8H100G-1

File Size: 95616 KB

Manufacturer: STMICROELECTRONICS [STMicroelectronics]

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STPS8H100G-TR Suppliers

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  • STP02

  • Vendor: SAMSUNG Pack: QFP D/C: 06+& Qty: 100 Note: New original stock  Adddate: 2026-08-22
  • Inquire Now
  • SHENZHEN SHI KEN ELECTRONICS   China
    Contact: Mr.lin   MSN:skyline.dk@msn.com
    Tel: 86-755-83030307
    Fax: 86-755-83030408
    (6)

About STPS8H100G-TR

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Datasheet: STPS8H100G-TR

File Size: 93075 KB

Manufacturer: STMICROELECTRONICS [STMicroelectronics]

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STPS8H100G Parameters

Technical/Catalog InformationSTPS8H100G
VendorSTMicroelectronics
CategoryDiscrete Semiconductor Products
Diode Type Schottky
Voltage - DC Reverse (Vr) (Max)100V
Current - Average Rectified (Io)8A
Voltage - Forward (Vf) (Max) @ If710mV @ 8A
Reverse Recovery Time (trr)-
Current - Reverse Leakage @ Vr4.5A @ 100V
SpeedFast Recovery =< 500ns, > 200mA (Io)
Mounting TypeSurface Mount
Package / CaseD&sup2;Pak, SMD-220, TO-263 (2 leads + tab)
PackagingTube
Capacitance @ Vr, F-
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names STPS8H100G
STPS8H100G

STPS8H100G General Description

Schottky barrier rectifier designed for high frequency compact Switched Mode Power Supplies such as adaptators and on board DC/DC converters.

STPS8H100G Maximum Ratings

Symbol
Parameter
Value
Unit
VRRM
Repetitive peak reverse voltage
100
V
I F(RMS)
RMS forward current
30
A
I F(AV)
Average forward current
d = 0.5
TO-220AC/
I2PAK / D2PAK
Tc= 165°C
8
A
ISOWATT220AC Tc = 150°C
IFSM
Surge non repetitive forward
current
tp = 10 ms sinusoidal
250
A
IRRM
Repetitive peak reverse current tp = 2 ms F = 1kHz square
1
A
IRSM
Non repetitive peak reverse current tp = 100 ms square
3
A
Eas
Non repetitive avalanche energy Tj= 25°C L=60mH
Ias = 2 A
24
mJ
Iar
Repetitive avalanchecurrent Va = 1.5 x VR typ
Current decaying linearly
to 0 in 1ms
Frequency limited by Tj max
2
A
Tstg
Storage temperaturerange
- 65 to + 175
°C
Tj
Maximum operating junction temperature
175
°C
dV/dt
Critical rate of rise of rise voltage
10000
V/s

STPS8H100G Features

·NEGLIGIBLESWITCHINGLOSSES
·HIGHJUNCTION TEMPERATURE CAPABILITY
·LOWLEAKAGECURRENT
·GOOD TRADE OFF BETWEEN LEAKAGE
·CURRENTAND FORWARDVOLTAGEDROP
·AVALANCHERATED

STPS8H100G-1 General Description

Schottky barrier rectifier designed for high frequency compact Switched Mode Power Supplies such as adaptators and on board DC/DC converters.

STPS8H100G-1 Maximum Ratings

Symbol
Parameter
Value
Unit
VRRM
Repetitive peak reverse voltage
100
V
I F(RMS)
RMS forward current
30
A
I F(AV)
Average forward current
d = 0.5
TO-220AC/
I2PAK / D2PAK
Tc= 165°C
8
A
ISOWATT220AC Tc = 150°C
IFSM
Surge non repetitive forward
current
tp = 10 ms sinusoidal
250
A
IRRM
Repetitive peak reverse current tp = 2 ms F = 1kHz square
1
A
IRSM
Non repetitive peak reverse current tp = 100 ms square
3
A
Eas
Non repetitive avalanche energy Tj= 25°C L=60mH
Ias = 2 A
24
mJ
Iar
Repetitive avalanchecurrent Va = 1.5 x VR typ
Current decaying linearly
to 0 in 1ms
Frequency limited by Tj max
2
A
Tstg
Storage temperaturerange
- 65 to + 175
°C
Tj
Maximum operating junction temperature
175
°C
dV/dt
Critical rate of rise of rise voltage
10000
V/s

STPS8H100G-1 Features

·NEGLIGIBLESWITCHINGLOSSES
·HIGHJUNCTION TEMPERATURE CAPABILITY
·LOWLEAKAGECURRENT
·GOOD TRADE OFF BETWEEN LEAKAGE
·CURRENTAND FORWARDVOLTAGEDROP
·AVALANCHERATED

STPS8H100G-TR Parameters

Technical/Catalog InformationSTPS8H100G-TR
VendorSTMicroelectronics (VA)
CategoryDiscrete Semiconductor Products
Diode Type Schottky
Voltage - DC Reverse (Vr) (Max)100V
Current - Average Rectified (Io)8A
Voltage - Forward (Vf) (Max) @ If710mV @ 8A
Reverse Recovery Time (trr)-
Current - Reverse Leakage @ Vr4.5A @ 100V
SpeedFast Recovery =< 500ns, > 200mA (Io)
Mounting TypeSurface Mount
Package / CaseD&sup2;Pak, SMD-220, TO-263 (2 leads + tab)
PackagingCut Tape (CT)
Capacitance @ Vr, F-
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names STPS8H100G TR
STPS8H100GTR
497 7571 1 ND
49775711ND
497-7571-1

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