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TBB1002BMTL-E, TBB1004, TBB1004DMTL

TBB1002BMTL-E, TBB1004, TBB1004DMTL Selling Leads, Datasheet

MFG:HITACHI/RENESAS  Package Cooled:SOT363  D/C:09+

TBB1002BMTL-E, TBB1004, TBB1004DMTL Picture

TBB1002BMTL-E, TBB1004, TBB1004DMTL Datasheet download

Five Points

Part Number: TBB1002BMTL-E

 

MFG: HITACHI/RENESAS

Package Cooled: SOT363

D/C: 09+

 

 

 
 
 
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TBB1002BMTL-E Suppliers

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  • TBB024G

  • Vendor: siemens Pack: SOP D/C: 03+& Qty: 110 Note: in stock  Adddate: 2024-04-30
  • Inquire Now
  • Tord Electronics(hk) Co., Limited   China
    Contact: Mr.zhudavid   MSN:david-tord@hotmail.com
    Tel: 86-755-82811283
    Fax: 86-755-83229740
    (516)

About TBB042G

PDF/DataSheet Download

Datasheet: TBB042G

File Size: 125129 KB

Manufacturer: ETC [ETC]

Download : Click here to Download

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TBB1004 Suppliers

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  • TBB024G

  • Vendor: siemens Pack: SOP D/C: 03+& Qty: 110 Note: in stock  Adddate: 2024-04-30
  • Inquire Now
  • Tord Electronics(hk) Co., Limited   China
    Contact: Mr.zhudavid   MSN:david-tord@hotmail.com
    Tel: 86-755-82811283
    Fax: 86-755-83229740
    (516)

About TBB042G

PDF/DataSheet Download

Datasheet: TBB042G

File Size: 125129 KB

Manufacturer: ETC [ETC]

Download : Click here to Download

Related PDF Download

Related Part Number

TBB1004DMTL Suppliers

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  • TBB024G

  • Vendor: siemens Pack: SOP D/C: 03+& Qty: 110 Note: in stock  Adddate: 2024-04-30
  • Inquire Now
  • Tord Electronics(hk) Co., Limited   China
    Contact: Mr.zhudavid   MSN:david-tord@hotmail.com
    Tel: 86-755-82811283
    Fax: 86-755-83229740
    (516)

About TBB042G

PDF/DataSheet Download

Datasheet: TBB042G

File Size: 125129 KB

Manufacturer: ETC [ETC]

Download : Click here to Download

Related PDF Download

Related Part Number

TBB1004 General Description

      This is the description about TBB1004 of the Twin Build in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier.
      Here are the features: Small SMD package CMPAK-6 built in twin BBFET; To reduce using parts cost & PC board space.Suitable for World Standard Tuner RF amplifier.Very useful for total tuner cost reduction.Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions. Provide mini mold packages; CMPAK-6.
      The absolute Maximum Ratings are these (TA = 25°C). Drain to source voltage is 6 V. Gate1 to source voltage is from -0 to +6 V. Gate2 to source voltage VG2S from -0 to +6 V. Drain current is 30 mA. Channel power dissipation is 250 mW. Channel temperature Tch is 150 °C. Storage temperature Tstg  is from 55 to +150 °C.
      These are the Electrical Characteristics (Ta = 25°C). The below specification are applicable for UHF unit (FET1). Drain to source breakdown voltage is 6 V. Gate1 to source breakdown voltage is +6V. Gate2 to source breakdown voltage is +6 V. Gate1 to source cutoff current is +100 nA. Gate2 to source cutoff current is +100 nA. Gate1 to source cutoff voltage is from 0.5 to 1.0 V. Gate2 to source cutoff voltage is from 0.5 to 1.0 V. Drain current is from 13 to 21 mA. Forward transfer admittance is from| 21 to 31 mS. Input capacitance is from 1.4 to 2.2 pF. Output capacitanceis from 1.0 to 1.8 pF.Reverse transfer capacitance is  0.04 pF.
      At present there is not too much information about this model. If you are willing to find more about the TBB1004, please pay attention to our web! We will promptly update the relevant information. You can find it in www.ChinaICMart.com or www.seekic.com. Welcome to contact with us.


TBB1004 Maximum Ratings



TBB1004 Features



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