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TH58100BFTI, TH58100FT, TH58100FTI

TH58100BFTI, TH58100FT, TH58100FTI Selling Leads, Datasheet

MFG:TOSHIBA  Package Cooled:N/A  D/C:TSOP

TH58100BFTI, TH58100FT, TH58100FTI Picture

TH58100BFTI, TH58100FT, TH58100FTI Datasheet download

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Part Number: TH58100BFTI

 

MFG: TOSHIBA

Package Cooled: N/A

D/C: TSOP

 

 

 
 
 
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About TH50VSF1480

PDF/DataSheet Download

Datasheet: TH50VSF1480

File Size: 1194112 KB

Manufacturer: Toshiba Semiconductor

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About TH58100FT

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Datasheet: TH58100FT

File Size: 431895 KB

Manufacturer: TOSHIBA [Toshiba Semiconductor]

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About TH50VSF1480

PDF/DataSheet Download

Datasheet: TH50VSF1480

File Size: 1194112 KB

Manufacturer: Toshiba Semiconductor

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TH58100FT General Description

The TH58100 is a single 3.3 V 1-Gbit (1,107,296,256) bit NAND Electrically Erasable and ProgrammableRead-Only Memory (NAND E2PROM) organized as 528 bytes  32 pages  8192 blocks. The device has a 528-bytestatic register which allows program and read data to be transferred between the register and the memory cell arrayin 528-byte increments. The Erase operation is implemented in a single block unit (16 Kbytes  512 bytes: 528 bytes 32 pages).

The TH58100 is a serial-type memory device which utilizes the I/O pins for both address and data input/output aswell as for command inputs. The Erase and Program operations are automatically executed making the device mostsuitable for applications such as solid-state file storage, voice recording, image file memory for still cameras andother systems which require high-density non-volatile memory data storage.

TH58100FT Maximum Ratings

SYMBOL RATING VALUE UNIT
VCC Power Supply Voltage 0.6 to 4.6 V
VIN Input Voltage 0.6 to 4.6 V
VI/O Input/Output Voltage 0.6 V to VCC  0.3 V ( 4.6 V) V
PD Power Dissipation 0.3 W
Tsolder Soldering Temperature (10s) 260 °C
Tstg Storage Temperature 55 to 150 °C
Topr Operating Temperature 0 to 70 °C

TH58100FT Features

 OrganizationMemory cell allay 528  128K  8  2Register 528  8Page size 528 bytesBlock size (16K  512) bytes
 ModesRead, Reset, Auto Page ProgramAuto Block Erase, Status ReadMulti Block Program, Multi Block Erase
 Mode controlSerial input/outputCommand control
Power supply VCC  2.7 V to 3.6 V
 Program/Erase Cycles 1E5 cycle (with ECC)
 Access timeCell array to register 25 s maxSerial Read Cycle 50 ns min
Operating currentRead (50 ns cycle) 10 mA typ.Program (avg.) 10 mA typ.Erase (avg.) 10 mA typ.Standby 100 A
 PackageTSOPI48-P-1220-0.50 (Weight: 0.53 g typ.)

TH58100FT Connection Diagram

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