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TPD1028AS, TPD1030, TPD1030F

TPD1028AS, TPD1030, TPD1030F Selling Leads, Datasheet

MFG:TOSHIBA  Package Cooled:TO-92L  D/C:0813+

TPD1028AS, TPD1030, TPD1030F Picture

TPD1028AS, TPD1030, TPD1030F Datasheet download

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Part Number: TPD1028AS

 

MFG: TOSHIBA

Package Cooled: TO-92L

D/C: 0813+

 

 

 
 
 
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  • TPD1030

  • Vendor: Toshiba Pack: SOP D/C: 04+& Qty: 5000  Adddate: 2024-04-29
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  • TPD1030F

  • Vendor: Toshiba Pack: SOP Qty: 12000 Note: in stock  Adddate: 2024-04-29
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  • TPD1032

  • Vendor: Toshiba Pack: SOP D/C: 04+& Qty: 5000  Adddate: 2024-04-29
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  • TPD1033

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  • TPD1034

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  • TPD1036

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About TPD1028AS

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Datasheet: TPD1028AS

File Size: 244280 KB

Manufacturer: Toshiba

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TPD1030 Suppliers

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  • TPD1030

  • Vendor: Toshiba Pack: SOP D/C: 04+& Qty: 5000  Adddate: 2024-04-29
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  • TPD1030F

  • Vendor: Toshiba Pack: SOP Qty: 12000 Note: in stock  Adddate: 2024-04-29
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  • TPD1030

  • Vendor: Toshiba Pack: SOP D/C: 04+& Qty: 5000  Adddate: 2024-04-29
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  • TPD1030F

  • Vendor: Toshiba Pack: SOP Qty: 12000 Note: in stock  Adddate: 2024-04-29
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  • ZHONGXINIC Electronics   China
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About TPD1030

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Datasheet: TPD1030

File Size: 115450 KB

Manufacturer: TOSHIBA [Toshiba Semiconductor]

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  • TPD1030F

  • Vendor: Toshiba Pack: SOP Qty: 12000 Note: in stock  Adddate: 2024-04-29
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  • ZHONGXINIC Electronics   China
    Contact: Mr.Zhang  
    Tel: 086-755-82736756
    Fax: 086-755-82736756
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  • TPD1030

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  • TPD1030F

  • Vendor: Toshiba Pack: SOP Qty: 12000 Note: in stock  Adddate: 2024-04-29
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  • ZHONGXINIC Electronics   China
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  • TPD1032

  • Vendor: Toshiba Pack: SOP D/C: 04+& Qty: 5000  Adddate: 2024-04-29
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  • TPD1033

  • Vendor: Toshiba Pack: SOP D/C: 04+& Qty: 5000  Adddate: 2024-04-29
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About TPD1030F

PDF/DataSheet Download

Datasheet: TPD1030F

File Size: 115450 KB

Manufacturer: TOSHIBA [Toshiba Semiconductor]

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TPD1028AS General Description

The TPD1028AS is designed as monolithic power IC for low-side switch. It has a vertical MOSFET output which can be directly driven from a CMOS or TTL logic circuit. It offers intelligent self-protection functions.

It has five features. (1)A monolithic power IC with a new structure combining a control block and a vertical power MOSFET on a single chip. (2)Can cirectly drive a power load from a CMOS logic etc. (3)Built-in protection circuits against overvoltage, overheat, and overcurrent. (4)Low on-resistance which would be 0.25 ohms max at Vin=5V and Tj=25°C. (5)Package TPS can be packed in tape. Those are all the main features.

Some absolute maximum ratings have been concluded into several points as follow. (1)Its drain to source voltage would be 40V. (2)Its output current would be 1.5A. (3)Its input voltage would be from -0.5V to 6V. (4)Its power dissipation would be 1.2W. (5)Its energy tolerance would be 200mJ. (6)Its operating temperature range would be from -40°C to 85°C. (7)Its junction temperature would be 150°C. It should be noted that stresses above those listed in absolute maximum ratings may cause permanent damage to device.

Also some electrical characteristics are concluded as follow. (1)Its drain to source breakdown voltage would be min 40V. (2)Its operating supply voltage would be max 38V. (3)Its high level input voltage would be min 4.5V and typ 5V and max 5.5V. (4)Its low level input voltage would be max 0.8V. (5)Its current at output off would be max 100uA at Vds=40V and max 10uA at Vds=24V. (6)Its input current would be max 300uA. (7)Its on-resistance would be max 0.25 ohms. (8)Its overheat protection would be typ 160°C. (9)Its overcurrent protection would be typ 10A during inrush and would be typ 3A when shorted load. (10)Its shorted load detection voltage would be typ 12V. (11)Its switching time would be typ 70uA for tON and would be typ 120us for tOFF. (12)Its diode forward voltage between drain and source would be typ 0.9V and max 1.8V. And so on. If you have any question or suggestion or want to know more information please contact us for details. Thank you!

TPD1030F Maximum Ratings

Characteristics
Symbol
Rating
Unit
Drain-source voltage
V DS(DC)
40
V
Drain current
ID
Internally Limited
A
Input voltage
VIN
−0.3 to 7
V
Power dissipation (t = 10 s)
PD
2.0 (Note 3)
W
Single pulse active clamp capability
(Note 4)
EAS
10
mJ
Active clamp current
IAR
1
A
Repetitive active clamp capability
(Note 5)
EAR
0.2
mJ
Operating temperature
Topr
−40 to 110
Channel temperature
Tch
150
Storage temperature
Tstg
−55 to 150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

TPD1030F Features

• Two built-in power IC chips with a new structure combining a control block and a vertical power MOSFET (L2--MOS) on each chip.
• Can directly drive a power load from a CMOS or TTL logic.
• Built-in protection circuits against overvoltage (active clamp), overtemperature (thermal shutdown), and overcurrent (current limiter).
• Low Drain-Source ON-resistance: R DS (ON) = 0.6 (max) (@VIN = 5 V, ID = 0.5 A, Tch = 25)
• Low Leakage Current: IDSS = 10 A (max) (@VIN = 0 V, VDS = 30 V, Tch = 25)
• Low Input Current: IIN = 300 A (max) (@VIN = 5 V, Tch = 25)
• 8-pin SOP package with embossed-tape packing.

TPD1030F Connection Diagram

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