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TPD1032F, TPD1034, TPD1034F

Table of contents:
Info of TPD1032F
Info of TPD1034
Info of TPD1034F

TPD1032F, TPD1034, TPD1034F Selling Leads, Datasheet

MFG:ROHM Package Cooled:SOP D/C:09+

TPD1032F, TPD1034, TPD1034F Datasheet download

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Part Number: TPD1032F

MFG: ROHM

Package Cooled: SOP

D/C: 09+

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TPD1032F Maximum Ratings

Characteristics	Symbol	Rating	Unit
Drain-source voltage	V_DS _(DC)	20	V
Drain current	I_D	Internally Limited	A
Input voltage	V_IN	-0.3 to 7	V
Power dissipation (t = 10 s)	P_D	2.0 (Note3)	W
Operating temperature	T_opr	-40 to 110	°C
Channel temperature	T_ch	150	°C
Storage temperature	T_stg	-55 to 150	°C

Note3: Drive operation: Mount on glass epoxy boad [1 inch² × 0.8 t] (in the two devices driving)

TPD1032F Features

• Built-in two power IC chips with a new structure combining a control block and a vertical power MOSFET (L²--MOS) on each chip.
• Can directly drive a power load from a CMOS or TTL logic.
• Built-in protection circuits against overvoltage (active clamp), overtemperature (thermal shutdown), and overcurrent (current limiter).
• Low Drain-Source ON-resistance: R_DS (ON) = 0.4 Ω (max) (@V_IN = 5 V, I_D = 1 A, T_ch = 25°C)
• Low Leakage Current: IDSS = 10 µA (max) (@V_IN = 0 V, V_DS = 30 V, Tch = 25°C)
• Low Input Current: I_IN = 300 A (max) (@V_IN = 5 V, T_ch = 25°C)
• 8-pin SOP package for surface with embossed-tape packing.

TPD1032F Connection Diagram

TPD1034F General Description

The TPD1034F is a monolithic power IC for high-side switches. The IC has a vertical MOS FET output which can be directly driven from a CMOS or TTL logic circuit (e.g., an MPU). The device offers intelligent self-protection and diagnostic functions.

TPD1034F Maximum Ratings

Characteristic	Symbol	Rating	Unite
Drain-source voltage	V_DS	60	V
Supply voltage DC	V_DD (1)	25	V
Supply voltage Pulse	V_DD (2)	60 (Rs = 1, = 250 ms)	V
Input voltage DC	V_IN (1)	−0.5 ~ 12	V
Input voltage Pulse	V_IN (2)	VDD (1) + 1.5 (t = 100 ms)	V
Diagnosis output voltage	V_DIAG	−0.5 ~ 25	V
Output current	I_O	Internally limited	A
Input current	I_IN	±10	mA
Diagnosis output current	I_DIAG	5	mA
Power dissipation (Ta = 25°C)	P_D	1.4 (Note 1)	W
Power dissipation (Ta = 25°C)	P_D	2.4 (Note 2)	W
Operating temperature	T_opr	−40 ~ 110
Channel temperature	T_ch	150
Storage temperature	T_stg	−55 ~ 150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

TPD1034F Features

`A monolithic power IC with a new structure combining a control block (Bi-CMOS) and a vertical power MOS FET (-MOS) on a single chip.
`One side of the load can be grounded to a high-side switch.
`Can directly drive a power load from a microprocessor.
`Built-in protection against thermal shutdown and load short-circuiting.
`Incorporates a diagnosis function that allows diagnosis output to be read externally at load short-circuiting, opening, or overtemperature
`Up to −10 V of counter electromotive force from an L load can be applied.
`Low on-resistance : RON = 80 m (max)
`Low operating current : IDD = 1 mA (typ.), (@VDD = 12 V, VIN = 0 V)
`8-pin SOP package for surface mounting can be packed in tape.

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