TPDA1C010M8S, TPDEM 1, TPDV1025 Selling Leads, Datasheet
MFG:NEC Package Cooled:N A D/C:N/A
TPDA1C010M8S, TPDEM 1, TPDV1025 Datasheet download
Part Number: TPDA1C010M8S
MFG: NEC
Package Cooled: N A
D/C: N/A
TPDA1C010M8S, TPDEM 1, TPDV1025
- Table of contents:
Info of TPDA1C010M8S
Info of TPDEM 1
Info of TPDV1025
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About TPD1008SA
PDF/DataSheet Download
Datasheet: TPD1008SA
File Size: 332925 KB
Manufacturer: TOSHIBA [Toshiba Semiconductor]
Download : Click here to Download
About TPD1008SA
PDF/DataSheet Download
Datasheet: TPD1008SA
File Size: 332925 KB
Manufacturer: TOSHIBA [Toshiba Semiconductor]
Download : Click here to Download
About TPDV1025
PDF/DataSheet Download
Datasheet: TPDV1025
File Size: 68216 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
TPDV1025 General Description
The TPDV 625 ---> 1225 use a high performance passivated glass alternistor technology. Featuring very high commutation levels and high surge current capability, this family is well adapted to power control on inductive load (motor, transformer...)
TPDV1025 Maximum Ratings
|
Symbol |
Parameter |
Value |
Unit | |
|
IT(RMS) |
RMS on-state current (360° conduction angle) |
Tc = 85 °C |
25 |
A |
|
ITSM |
Non repetitive surge peak on-state current ( Tj initial = 25°C ) |
tp = 2.5 ms |
390 |
A |
|
tp = 8.3 ms |
250 | |||
|
tp = 10 ms |
230 | |||
|
I2t |
I2t value |
tp = 10 ms |
265 |
A2s |
|
dI/dt |
Critical rate of rise of on-state current Gate supply : IG = 500mA diG/dt = 1A/s |
Repetitive F = 50 Hz |
20 |
A/ms |
|
Non Repetitive |
100 | |||
|
Tstg Tj |
Storage and operating junction temperature range |
- 40 to + 150 - 40 to + 125 |
°C °C | |
|
Tl |
Maximum lead temperature for soldering during 10 s at 4.5 mm from case |
260 |
°C | |
TPDV1025 Features
·HIGH COMMUTATION : > 88A/ms (400Hz)
·INSULATING VOLTAGE = 2500V(RMS)(UL RECOGNIZED : EB81734)
·HIGH VOLTAGE CAPABILITY : VDRM = 1200 V
·INSULATING VOLTAGE = 2500V(RMS)(UL RECOGNIZED : EB81734)
·HIGH VOLTAGE CAPABILITY : VDRM = 1200 V
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