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The TPDV 625 ---> 1225 use a high performance passivated glass alternistor technology. Featuring very high commutation levels and high surge current capability, this family is well adapted to power control on inductive load (motor, transformer...)
TPDV825 Maximum Ratings
Symbol
Parameter
Value
Unit
IT(RMS)
RMS on-state current (360° conduction angle)
Tc = 85 °C
25
A
ITSM
Non repetitive surge peak on-state current ( Tj initial = 25°C )
tp = 2.5 ms
390
A
tp = 8.3 ms
250
tp = 10 ms
230
I2t
I2t value
tp = 10 ms
265
A2s
dI/dt
Critical rate of rise of on-state current Gate supply : IG = 500mA diG/dt = 1A/s
Repetitive F = 50 Hz
20
A/ms
Non Repetitive
100
Tstg Tj
Storage and operating junction temperature range
- 40 to + 150 - 40 to + 125
°C °C
Tl
Maximum lead temperature for soldering during 10 s at 4.5 mm from case
260
°C
TPDV825 Features
·HIGH COMMUTATION : > 88A/ms (400Hz) ·INSULATING VOLTAGE = 2500V(RMS)(UL RECOGNIZED : EB81734) ·HIGH VOLTAGE CAPABILITY : VDRM = 1200 V
TPDV840 General Description
The TPDV 640 ---> 1240 use a high performance passivated glass alternistor technology. Featuring very high commutation levels and high surge current capability, this family is well adapted to power control on inductive load (motor, transformer...)
TPDV840 Maximum Ratings
Symbol
Parameter
Value
Unit
IT(RMS)
RMS on-state current (360° conduction angle)
Tc = 75 °C
40
A
ITSM
Non repetitive surge peak on-state current ( Tj initial = 25°C )
tp = 2.5 ms
590
A
tp = 8.3 ms
370
tp = 10 ms
350
I2t
I2t value
tp = 10 ms
610
A2s
dI/dt
Critical rate of rise of on-state current Gate supply : IG = 500mA diG/dt = 1A/s
Repetitive F = 50 Hz
20
A/ms
Non Repetitive
100
Tstg Tj
Storage and operating junction temperature range
- 40 to + 150 - 40 to + 125
°C °C
Tl
Maximum lead temperature for soldering during 10 s at 4.5 mm from case
260
°C
TPDV840 Features
·HIGH COMMUTATION : > 142A/ms (400Hz) ·INSULATING VOLTAGE = 2500V(RMS)(UL RECOGNIZED : EB81734) ·HIGH VOLTAGE CAPABILITY : VDRM = 1200 V