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U6264AS1A, U6264ASC, U6264B

Table of contents:
Info of U6264AS1A
Info of U6264ASC
Info of U6264B

U6264AS1A, U6264ASC, U6264B Selling Leads, Datasheet

MFG:5 Package Cooled:TFK D/C:1100

U6264AS1A, U6264ASC, U6264B Datasheet download

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Part Number: U6264AS1A

MFG: 5

Package Cooled: TFK

D/C: 1100

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U6264B General Description

The U6264B is a static RAM manufactured using a CMOS process technology with the following operating modes:
- Read - Standby
- Write - Data Retention
The memory array is based on a 6-transistor cell.

The circuit is activated by the rising edge of E2 (at E1 = L), or the falling edge of E1 (at E2 = H). The address and control inputs open simultaneously. According to the information of W and G, the data inputs, or outputs, are active. In a Read cycle, the data outputs are activated by the falling edge of G,afterwards the data word read will be available at the outputs DQ0 -DQ7. After the address change, the data outputs go High-Z until the new read information is available.

The data outputs have no preferred state. If the memory is driven by CMOS levels in the active state, and if there is no change of the address, data input and control signals W or G, the operating current (at I_O= 0 mA) drops to the value of the operating current in the Standby mode. The Read cycle is finished by the falling edge of E2 or W, or by the rising edge of E1, respectively.

Data retention is guaranteed down to 2 V. With the exception of E2, all inputs consist of NOR gates, so that no pull-up/pull-down resistors are required. This gate circuit allows to achieve low power standby requirements by activation
with TTL-levels too.If the circuit is inactivated by E2 = L, the standby current (TTL) drops to 150 A typ.

U6264B Maximum Ratings

Absolute Maximum Ratings ^a	Symbol	Min.	Max.	Unit
Power Supply Voltage	V_CC	-0.3	7	V
Input Voltage	V_I	-0.3	V_CC+0.5^b	V
Output Voltage	V_O	-0.3	V_CC+0.5^b	V
Power Dissipation	P_D	-	1	W
Operating Temperature C-Type K-Type A-Type	T_a	0 -40 -40	70 85 125	°C °C °C
Storage Temperature C/K-Type A-Type	T_stg	-55 -65	125 150	°C °C
Output Short-Circuit Current at V_CC= 5 V and V_O= 0 V ^c	\| I_OS \|		100	mA

a Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only, and functional operation of the device at condition above those indicated in the operational sections of this specification is not implied.Exposure to absolute maximum rating conditions for extended periods may affect reliability

b Maximum voltage is 7 V

c Not more than 1 output should be shorted at the same time. Duration of the short circuit should not exceed 30 s.

U6264B Features

` 8192 x 8 bit static CMOS RAM
` 70 ns Access Times
` Common data inputs and outputs
` Three-state outputs
` Typ. operating supply current 70 ns: 10 mA
` Standby current:< 2 A at T_a 70 °C
` Data retention current at 2 V:< 1 A at T_a 70 °C
` TTL/CMOS-compatible
` Automatic reduction of power dissipation in long Read or Write cycles
` Power supply voltage 5 V
` Operating temperature ranges:
                                          0 to 70 °C
                                       -40 to 85 °C
                                     -40 to 125 °C
` QS 9000 Quality Standard
` ESD protection > 2000 V
                      (MIL STD 883C M3015.7)
` Latch-up immunity > 100 mA
` Packages: PDIP28 (600 mil)
                       SOP28 (330 mil)

U6264B Connection Diagram

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