VF1C-A2, VF20100C, VF20100R Selling Leads, Datasheet
MFG:SGS THOMAS Package Cooled:00+ D/C:25
VF1C-A2, VF20100C, VF20100R Datasheet download
Part Number: VF1C-A2
MFG: SGS THOMAS
Package Cooled: 00+
D/C: 25
VF1C-A2, VF20100C, VF20100R
- Table of contents:
Info of VF1C-A2
Info of VF20100C
Info of VF20100R
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About VF194H1.54M
PDF/DataSheet Download
Datasheet: VF194H1.54M
File Size: 215585 KB
Manufacturer: ETC [ETC]
Download : Click here to Download
About VF294H1.54M
PDF/DataSheet Download
Datasheet: VF294H1.54M
File Size: 215585 KB
Manufacturer: ETC [ETC]
Download : Click here to Download
About VF294H1.54M
PDF/DataSheet Download
Datasheet: VF294H1.54M
File Size: 215585 KB
Manufacturer: ETC [ETC]
Download : Click here to Download
VF20100C General Description
V20100C, VF20100C, VB20100C & VI20100C datasheet
VF20100C Maximum Ratings
| PARAMETER | SYMBOL | V20100C | VF20100C | VB20100C | VI20100C | UNIT |
| Maximum repetitive peak reverse voltage | VRRM | 100 | V | |||
| Maximum average forward rectified current (Fig. 1)per device per diode |
IF(AV) | 20 10 |
A | |||
| Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load |
IFSM | 150 | A | |||
| Isolation voltage (ITO-220AB only) From terminal to heatsink t = 1 min |
VAC | 1500 | V | |||
| Operating junction and storage temperature range | TJ, TSTG | - 40 to + 150 | ||||
VF20100C Features
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)
• Solder dip 260 °C, 40 s (for TO-220AB, ITO-220AB and TO-262AA package)
• Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)
• Solder dip 260 °C, 40 s (for TO-220AB, ITO-220AB and TO-262AA package)
• Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC
VF20100C Typical Application
For use in high frequency inverters, switching power supplies, freewheeling diodes, OR-ing diode, dc-to-dc converters and reverse battery protection.
VF20100R General Description
V20100R & VF20100R datasheet
VF20100R Maximum Ratings
| PARAMETER |
SYMBOL |
V20100R |
VF20100R |
UNIT |
| Maximum repetitive peak reverse voltage |
VRRM |
100 |
V | |
| Maximum average forward rectified total device current (Fig. 1) per diode |
IF(AV) |
20 10 |
A | |
| Peak forward surge current 10 ms single half sine-wave superimposed on rated load per diode |
IFSM |
120 |
A | |
| Isolation voltage (ITO-220AB only) from terminal to heatsink t = 1 min |
VAC |
1500 |
V | |
| Operating junction and storage temperature range |
TJ, TSTG |
- 40 to + 150 |
||
VF20100R Features
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Solder dip 260 , 40 s
• Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC
• Low forward voltage drop, low power losses
• High efficiency operation
• Solder dip 260 , 40 s
• Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC
VF20100R Typical Application
For use in high frequency inverters, switching power supplies, freewheeling diodes, OR-ing diode, dc-to-dc converters and reverse battery protection.
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