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Index 2 : 2SA1391,2SA1390,2SA1301,
2SA1391
Vendor:Other Category:Other
2SA1390
Mfg:5000 Pack:HITACHI Vendor:Other Category:Other
2SA1389
Vendor:Other Category:Other
The 2SA1389 features: ·With MT-200 package·Fast switching speed·Excellent safe operating area2SA1388
Vendor:Other Category:Other
The 2SA1388 features: ·With TO-220Fa package·Low collector saturation voltage·High speed switching time·Complementary to 2SC35402SA1387
Vendor:Other Category:Other
The 2SA1387 features: ·With TO-220Fa package·Low collector saturation voltage·High speed switching time·High DC current gain2SA1386A
D/C:06+ Vendor:Other Category:Other
2SA1386
Vendor:Other Category:Other
The 2SA1386 features: ·High Collector-Emitter Breakdown Voltage- V(BR)CEO= -160V(Min)·Good Linearity of hFE·Complement to Type 2SC35192SA1385-Z
Mfg:NEC Pack:TO-252 D/C:09+ Vendor:Other Category:Other
2SA1384
Mfg:TOSHIBA Pack:SOT-89 Vendor:Other Category:Other
2SA1383
Vendor:Other Category:Other
The 2SA1383 features: ·With TO-220 package Fig.1 simplified outline (TO-220) and symbol·Complement to type 2SC3514·High transition frequency2SA1382
Vendor:Other Category:Other
The 2SA1382 is a PNP silicon epitaxial palanr type transistors. Features of the 2SA1382 are:(1)high DC current gain:hFE=150~400(LC=-0.5A);(2)low saturation voltage:VCE(sat)=-0.5V(MAX.)(IC=-1A);(3)high speed switching:Ts...2SA1381/KSA1381
Vendor:Other Category:Other
The 2SA1381/KSA1381 (PNP Epitaxial Silicon Transistor) is used in audio, voltage amplifier and current source, general purpose amplifier, and CRT display, video output, and which possesses high voltage (VCEO= -300V...2SA1381
Vendor:Other Category:Other
2SA1380.
Vendor:Other Category:Other
The 2SA1380 is a PNP epitaxial palanr silicon transistors. Features of the 2SA1382 are:(1)high breakdown voltage:VCEO200V;(2)small reverse transfer capactiance and excellent high-frequency characteristics:Cre=1.2pF(NPN)...2SA1380
Vendor:Other Category:Other
2SA1376
Vendor:Other Category:Other
The 2SA1376 is designed as one kind of PNP silicon transistor that is designed for general-purpose applications requiring high breakdown voltages. Features of the 2SA1376 are:(1)high breakdown voltage: VCEO= -180 V/ -200...2SA1374
Mfg:5000 Pack:HITACHI Vendor:Other Category:Other
2SA1371E-AE
Vendor:Other Category:Other
The 2SA1371E-AE is designed as one kind of PNP / NPN epitaxial planar silicon transistor that is designed for high-definition CRT display, video output applications. Features of the device are:(1)high breakdown voltage: ...2SA1371
Vendor:Other Category:Other
2SA1370D-AE
Vendor:Other Category:Other
The 2SA1370D-AE is designed as one kind of PNP / NPN epitaxial planar silicon transistor that is designed for high-definition CRT display, video output applications. Features of the 2SA1370D-AE are:(1)high breakdown volt...2SA1370
Vendor:Other Category:Other
2SA1369-T11-1G
Vendor:Other Category:Other
The 2SA1369-T11-1G is designed as one kind of PNP / NPN epitaxial planar silicon transistor that is designed for high-definition CRT display, video output applications. Features of the 2SA1369-T11-1G are:(1)high hFE= 400...2SA1369
Mfg:MITSUBISHI Vendor:Other Category:Other
2SA1368
Mfg:5000 Pack:mitsubishi Vendor:Other Category:Other
2SA1365-T112-1F
Vendor:Other Category:Other
The 2SA1365-T112-1F is designed as one kind of PNP / NPN epitaxial planar silicon transistor that is designed for high-definition CRT display, video output applications. Features of the 2SA1365-T112-1F are:(1)low collect...2SA1365
Mfg:MITSUBISHI Pack:SOT-23 Vendor:Other Category:Other
2SA1364-T11-2E
Vendor:Other Category:Other
The 2SA1364-T11-2E is designed as one kind of PNP / NPN epitaxial planar silicon transistor that is designed for high-definition CRT display, video output applications. Features of the 2SA1364-T11-2E are:(1)low collector...2SA1364
Mfg:MITSUBISHI Pack:SOT-89 Vendor:Other Category:Other
2SA1363
Mfg:MITSUBISHI Pack:SOT-89 Vendor:Other Category:Other
2SA1362-GR
Vendor:Other Category:Other
The 2SA1362-GR is designed as one kind of silicon PNP epitaxial type (PCT process) that is designed for hlow frequency power amplifier applications and power switching applications. Features of the 2SA1362-GR are:(1)high...2SA1362
Mfg:TOS Pack:SOT-23 D/C:04+ Vendor:Other Category:Other
2SA1360-Y
Vendor:Other Category:Other
The 2SA1360-Y is designed as one kind of silicon PNP epitaxial type (PCT process) that is designed for hlow frequency power amplifier applications and power switching applications. Features of the device are:(1)complemen...2SA1360
Vendor:Other Category:Other
The 2SA1360 features: ·With TO-126 package·Complement to type 2SC3423·High transition frequency2SA1359-Y
Vendor:Other Category:Other
The 2SA1359-Y is designed as one kind of silicon PNP epitaxial type (PCT process) that is designed for audio frequency power amplifier applications and low speed applications. Features of the 2SA1359-Y are:(1)complementa...2SA1359
Vendor:Other Category:Other
The 2SA1359 features: ·With TO-126 package·Complement to type 2SC3422·Good linearity of hFE2SA1358-Y
Vendor:Other Category:Other
The 2SA1358-Y is designed as one kind of silicon PNP epitaxial type (PCT process) that is designed for audio frequency power amplifier applications and low speed applications. Features of the the device are:(1)complement...2SA1358
Vendor:Other Category:Other
The 2SA1358 features: ·High Collector-Emitter Breakdown Voltage : V(BR)CEO= -120V(Min)·Complement to Type 2SC34212SA1357-Y
Vendor:Other Category:Other
The 2SA1357-Y is designed as one kind of silicon PNP epitaxial type (PCT process) that can be used in strobe flash applications and audio power amplifier applications. Features of the 2SA1357-Y are:(1)min hFE of 70 at -2...2SA1357
Vendor:Other Category:Other
The 2SA1357 (TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)) is used in strobe flash applications, audio power amplifier applications, and which possesses high power dissipation (PC = 10 W (Tc = 25°C), PC = ...2SA1356
Vendor:Other Category:Other
The 2SA1356 is a silicon PNP epitaxial type(pct process). Features of the 2SA1356 are:(1)low saturation voltage:VCE(sat) =-0.32V(Typ.)(LC=-500MA,IB=-50mA);(2)high collector power dissipation:PC=1.2W(Ta=25);(3)complement...2SA1355
Vendor:Other Category:Other
The 2SA1355 features: ·With TO-220 package·Low collector saturation voltage.·Short switching time.2SA1353.
Vendor:Other Category:Other
The 2SA1353 is a PNP epitaxial silicon planar transistors. Features of the 2SA1353 are:(1)high breakdown voltage:VCEO300V;(2)excellcent high frequency characterisitics:Cre=1.8pF(typ);(3)adoption of MBIT process. The a...2SA1353
Vendor:Other Category:Other
2SA1352
Vendor:Other Category:Other
2SA1350
Mfg:5000 Pack:HITACHI Vendor:Other Category:Other
2SA1349
Vendor:Other Category:Other
The 2SA1349 is designed as one kind of silicon PNP epitaxial type (PCT process) that can be used in strobe flash applications and audio power amplifier applications. Features of the 2SA1349 are:(1)min hFE of 70 at -2V, -...2SA1348/2SC3402
Vendor:Other Category:Other
The 2SA1348/2SC3402 has following applications switching circuit,inverter,interface circuit,driver.It has 2 features one is built-in bias resistor(R1=10 K,R2=10 K),the other is small-sized package(SPA). Absolu...2SA1348
Vendor:Other Category:Other
The 2SA1348 is designed as one kind of PNP / NPN epitaxial planar silicon transistor that can be used in switching citcuit, inverter, interface circuit and driver. Features of the 2SA1348 are:(1)built-in bias resistor (R...2SA1347/2SC3401
Vendor:Other Category:Other
The 2SA1347/2SC3401 has following applications switching circuit,inverter,interface circuit,driver.It has 2 features one is built-in bias resistor(R1=46 K,R2=46 K),the other is small-sized package(SPA). Absolu...2SA1347
Vendor:Other Category:Other
The 2SA1347 is designed as one kind of PNP / NPN epitaxial planar silicon transistor that can be used in switching citcuit, inverter, interface circuit and driver. Features of the 2SA1347 are:(1)built-in bias resistor (R...2SA1346/2SC3400
Vendor:Other Category:Other
The 2SA1346/2SC3400 has following applications switching circuit,inverter,interface circuit,driver.It has 2 features one is built-in bias resistor(R1=22 K,R2=22 K),the other is small-sized package(SPA). Absolu...2SA1346
Vendor:Other Category:Other
The 2SA1346 is designed as one kind of PNP / NPN epitaxial planar silicon transistor that can be used in switching citcuit, inverter, interface circuit and driver. Features of the 2SA1346 are:(1)built-in bias resistor (R...2SA1345/2SC3399
Vendor:Other Category:Other
The 2SA1345/2SC3399 has following applications switching circuit,inverter,interface circuit,driver.It has 2 features one is built-in bias resistor(R1=47 K,R2=47 K),the other is small-sized package(SPA). Absolu...2SA1345
Vendor:Other Category:Other
The 2SA1345 is designed as one kind of PNP / NPN epitaxial planar silicon transistor that can be used in switching citcuit, inverter, interface circuit and driver. Features of the 2SA1345 are:(1)built-in bias resistor (R...2SA1344
Vendor:Other Category:Other
The 2SA1344 is designed as one kind of PNP / NPN epitaxial planar silicon transistor that can be used in switching citcuit, inverter, interface circuit and driver. Features of the 2SA1344 are:(1)built-in bias resistor (R...2SA1343
Vendor:Other Category:Other
The 2SA1343 is designed for switching tircuit, inverter circuit, interface circuit, driver circuit.In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traf...2SA1342/2SC3396
Vendor:Other Category:Other
The 2SA1342/2SC3396 has following applications switching circuit,inverter,interface circuit,driver.It has 2 features one is built-in bias resistor(R1=22 K,R2=22 K),the other is small-sized package(SPA). Absolu...2SA1342
Vendor:Other Category:Other
The 2SA1342 is designed as one kind of PNP / NPN epitaxial planar silicon transistor that can be used in switching citcuit, inverter, interface circuit and driver. Features of the device are:(1)built-in bias resistor (R1...2SA1341-TB
Vendor:Other Category:Other
The 2SA1341-TB is designed as one kind of PNP / NPN epitaxial planar silicon transistor that can be used in switching citcuit, inverter, interface circuit and driver. Features of the 2SA1341-TB are:(1)built-in bias resis...2SA1341
Mfg:SANYO Pack:SOT-23 Vendor:Other Category:Other
The 2SA1341 is designed as PNP/NPN epitaxial planar silicon transistors which typical applications contains switching circuit,inverter circuit,interface circuit and driver cricuit. It has two features.The firs...2SA1339S
Vendor:Other Category:Other
The 2SA1339S is one member of the 2SA1339 family which is designed as the PNP / NPN epitaxial planar silicon transistor that can be used in high-speed switching applications. Features of the 2SA1339S are:(1)very small-si...2SA1339
Vendor:Other Category:Other
2SA1338-5-TB
Vendor:Other Category:Other
The 2SA1338-5-TB is one member of the 2SA1338 family which is designed as the PNP / NPN epitaxial planar silicon transistor that can be used in high-speed switching applications. Features of the 2SA1338-5-TB are:(1)very ...2SA1338
Vendor:Other Category:Other
2SA1337
Mfg:5000 Pack:HITACHI Vendor:Other Category:Other
The 2SA1337 features: · Low frequency low noise amplifier· HF amplefier2SA1333
Vendor:Other Category:Other
The 2SA1333 features: ·With MT-200 package·High power dissipation2SA1332
Vendor:Other Category:Other
The 2SA1332 features: ·With TO-220Fa package·High VCEO2SA1331-05-TB
Vendor:Other Category:Other
The 2SA1331-05-TB is one member of the 2SA1331 family which is designed as the PNP / NPN epitaxial planar silicon transistor that can be used in high-speed switching applications. Features of the 2SA1331-05-TB are:(1)fas...2SA1331
Vendor:Other Category:Other
2SA1330-T1B
Vendor:Other Category:Other
The 2SA1330-T1B is one member of the 2SA1330 family which is designed as the high voltage amplifier and switching PNP silicon epitaxial transistor that can be used in high-speed switching applications. Features of the 2S...2SA1330
Mfg:NEC Pack:SOT-23 Vendor:Other Category:Other
2SA1329S
Vendor:Other Category:Other
The 2SA1329S is one member of the 2SA1329 family which is designed as the high voltage amplifier and switching PNP silicon epitaxial transistor that can be used in high-speed switching applications. Features of the 2SA13...2SA1329
Vendor:Other Category:Other
The 2SA1329 features: ·With TO-220 package·Complement to type 2SC3346·Low collector saturation voltage·High speed switching time2SA1328S
Vendor:Other Category:Other
The 2SA1328S is one member of the 2SA1328 family which is designed as the high voltage amplifier and switching PNP silicon epitaxial transistor that can be used in high-speed switching applications. Features of the 2SA13...2SA1328
Vendor:Other Category:Other
The 2SA1328 features: ·Low Collector Saturation Voltage:VCE(sat)= -0.4(V)(Max)@IC= -6A·High Switching Speed·Complement to Type 2SC33452SA1327A
Vendor:Other Category:Other
The 2SA1327A is one member of the 2SA1327 family which is designed as the silicon PNP epitaxial transistor that can be used in strobe flash applications and audio power amplifier applications. Features of the 2SA1327A ar...2SA1327
Vendor:Other Category:Other
The 2SA1327 (Silicon PNP Power Transistors) is used in strobe flash applications, audio power amplifier applications, and is also low collector saturation voltage, high current capacity with TO-220Fa package.Some paramet...2SA1323
Mfg:5000 Pack:Panasonic Vendor:Other Category:Other
2SA1321
Vendor:Other Category:Other
The feature of 2SA1318 are as follows: (1)high voltage: VCEO = -250V; (2)low Cre: 1.8pF max; (3)complementary to 2SC3334. The absolute maximum ratings of the 2SA1321 are: (1)collector to base voltage: -250V; (2)emitter ...2SA1320
Mfg:NEC Pack:CAN D/C:05+ Vendor:Other Category:Other
The 2SA1320 (TOSHIBA Transistor Silicon PNP Triple Diffused Type (PCT process)) is used in color TV chroma output applications, high voltage switching applications, and which possesses high voltage (VCEO= -250V), l...2SA1319
Vendor:Other Category:Other
2SA1318
Vendor:Other Category:Other
The 2SA1318 is used in the low frequency to high frequency range. The feature of 2SA1318 is large current capacity and wide ASO. The absolute maximum ratings of the 2SA1318 are: (1)collector to base voltage: -60V; (2)em...2SA1316
Vendor:Other Category:Other
The feature of 2SA1316 are as follows: (1)low pulse noise. low 1/f noise; (2)low base spreading resistance: rbb'=2.0; (3)complementary to 2SC3329. The absolute maximum ratings of the 2SA1316 are: (1)collector to base vo...2SA1315YT
Vendor:Other Category:Other
The feature of 2SA1315YT are as follows: (1)low saturation voltage: VCE(sat) = -0.5(max)@IC = -1A; (2)high speed switching time: tstg=1.0s(typ.); (3)complementary to 2SC3328. The absolute maximum ratings of the 2SA1315Y...2SA1315
Mfg:NEC Pack:CAN D/C:05+ Vendor:Other Category:Other
The 2SA1315(TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)) is used in power amplifier applications, power switching applications, and possesses high-speed switching time: tstg = 1.0 s (typ.), low coll...2SA1314
Mfg:TOSHIBA Pack:SOT-89 Vendor:Other Category:Other
2SA1313-Y/ACY
Vendor:Other Category:Other
The feature of 2SA1313-Y/ACY are as follows: (1)excellent hFE linearity: hFE(2)=25(min) at VCE=-6V, IC=-400mA; (2)high voltage: VCEO = -50V min; (3)complementary to 2SC3325; (4)small package. The absolute maximum rating...2SA1313
Mfg:5000 Pack:toshiba Vendor:Other Category:Other
2SA1312
Mfg:5000 Pack:toshiba Vendor:Other Category:Other
2SA1310
Mfg:5000 Pack:Panasonic Vendor:Other Category:Other
2SA1308
Vendor:Other Category:Other
The 2SA1308 features: ·With TO-220F package Fig.1 simplified outline (TO-220F) and symbol·Low collector saturation voltage2SA1307
Vendor:Other Category:Other
2SA1306B
Vendor:Other Category:Other
The 2SA1306B features: ·Good Linearity of hFE·High Collector-Emitter Breakdown Voltage- (BR)CEO= -160V(Min)-2SA1306 -180V(Min)-2SA1306A -200V(Min)- A1306B·Complement to Type 2SC3298/A/B2SA1306A
Vendor:Other Category:Other
The 2SA1306A features: ·Good Linearity of hFE·High Collector-Emitter Breakdown Voltage- (BR)CEO= -160V(Min)-2SA1306 -180V(Min)-2SA1306A -200V(Min)- A1306B·Complement to Type 2SC3298/A/B2SA1306
Vendor:Other Category:Other
The 2SA1306 features: ·Good Linearity of hFE·High Collector-Emitter Breakdown Voltage- (BR)CEO= -160V(Min)-2SA1306 -180V(Min)-2SA1306A -200V(Min)- A1306B·Complement to Type 2SC3298/A/B2SA1305
Vendor:Other Category:Other
The 2SA1305 features: ·With TO-220Fa package·Low collector saturation voltage·High transition frequency2SA1304
Vendor:Other Category:Other
The 2SA1304 features: ·With TO-220Fa package·Complement to type 2SC3296·High breakdown voltage2SA1303
Vendor:Other Category:Other
2SA1302
Vendor:Other Category:Other
2SA1301
Vendor:Other Category:Other