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This VTL11D1-20 interrupter type transmissive optoswitches combines an infrared emitting diode (IRED) with an NPN phototransistor in a one piece, sealed, IR transmitting plastic case. The sealed construction improves res...
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The VTL11D1 is a kind of interrupter type transmissive optoswitch which combines an infrared emitting diode (IRED) with an NPN phototransistor into one piece, sealed, IR transmitting plastic case. The sealed construction...
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The VTL110 is a kind of low cost neon vactrol. It adopts a 70 VDC neon lamp. The vactrol is well suited for telephone ring detectors and other high volume applications where the supply voltage is limited for the guarante...
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The VTH2090 is designed as pin photodiode which consists of a chip with a 9.2x9.2mm active area mounted in a black ceramic package with an epoxy window. This device is ideal for scintillation detection, spetrophotometry,...
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Wirewound or metal film performance in a space saving package.VTF211BX SIP networks available in 3 - 10 pin sizes can obtain important performance parameters in an economical, mass producible style. SIPs take up the leas...
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Mfg:Vishay D/C:08+ Vendor:Other Category:Other
VTF (Standard) Conformal, Single In-Line Resistor Networks (Standard)
Mfg:Vishay D/C:08+ Vendor:Other Category:Other
VTF (Custom) Conformal, Single In-Line Resistor Networks (Custom)
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These VTE7173 side-looking packages are designed for use in PC board mounted interrupt detectors. The package is transfer molded plastic and contains a high efficiency, 880 nm, GaAlAs IRED die.
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These VTE7172 side-looking packages are designed for use in PC board mounted interrupt detectors. The package is transfer molded plastic and contains a high efficiency, 880 nm, GaAlAs IRED die.
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This VTE3374LA(H) narrow beam angle 3 mm diameter plastic packaged emitter is suitable for use in optical switch applications. It contains a small area, GaAlAs, 880 nm, high efficiency IRED die.
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This VTE3374LA narrow beam angle 3 mm diameter plastic packaged emitter is suitable for use in optical switch applications. It contains a small area, GaAlAs, 880 nm, high efficiency IRED die.
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This VTE3372LA(H) narrow beam angle 3 mm diameter plastic packaged emitter is suitable for use in optical switch applications. It contains a small area, GaAlAs, 880 nm, high efficiency IRED die.
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This VTE3372LA narrow beam angle 3 mm diameter plastic packaged emitter is suitable for use in optical switch applications. It contains a small area, GaAlAs, 880 nm, high efficiency IRED die.
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This VTE3324LA(H) narrow beam angle, 3 mm diameter plastic packages, GaAs, 940 nm emitter is suitable for use in optical switch applications.
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This VTE3324LA narrow beam angle, 3 mm diameter plastic packages, GaAs, 940 nm emitter is suitable for use in optical switch applications.
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This VTE3322LAH narrow beam angle, 3 mm diameter plastic packages, GaAs, 940 nm emitter is suitable for use in optical switch applications.
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This VTE3322LA(H) narrow beam angle, 3 mm diameter plastic packages, GaAs, 940 nm emitter is suitable for use in optical switch applications.
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This VTE3322LA narrow beam angle, 3 mm diameter plastic packages, GaAs, 940 nm emitter is suitable for use in optical switch applications.
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This narrow beam angle, 3 mm diameter plastic packages, GaAs, 940 nm emitter VTE24LAH is suitable for use in optical switch applications.
Mfg:1800 Vendor:Other Category:Other
This 5 mm diameter, custom lensed device VTE1295 contains a medium area, single wirebonded, GaAlAs, 880 nm high efficiency IRED chip. The custom lens allows this cost effective device to have a very narrow half power bea...
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This narrow beam angle 5 mm plastic packaged emitter VTE1291-2 contains a double wirebonded, GaAlAs, 880 nm IRED chip. This cost effective design is well suited for dc or high current pulse applications. This device is a...
Mfg:2000 Vendor:Other Category:Other
This narrow beam angle 5 mm plastic packaged emitter VTE1291-1 contains a double wirebonded, GaAlAs, 880 nm IRED chip. This cost effective design is well suited for dc or high current pulse applications. This device is a...
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This 5 mm diameter, custom lensed device VTE1285 contains a medium area, single wirebonded, GaAlAs, 880 nm high efficiency IRED chip. The custom lens allows this cost effective device to have a very narrow half power bea...
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This wide beam angle 5 mm diameter plastic packaged emitter VTE1281W-2(H) contains a GaAlAs, 880 nm IRED chip. It is a cost effective design and is well suited for high current pulse applications.(±25° beam angle)
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This wide beam angle 5 mm diameter plastic packaged emitter VTE1281W-2 contains a GaAlAs, 880 nm IRED chip. It is a cost effective design and is well suited for high current pulse applications.
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This wide beam angle 5 mm diameter plastic packaged emitter VTE1281W-1(H) contains a GaAlAs, 880 nm IRED chip. It is a cost effective design and is well suited for high current pulse applications. (±25° beam angle)
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This wide beam angle 5 mm diameter plastic packaged emitter VTE1281W-1 contains a GaAlAs, 880 nm IRED chip. It is a cost effective design and is well suited for high current pulse applications.
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This 5 mm diameter plastic packaged emitter has no lens. VTE1281F(H) is designed to be coupled to plastic fibers or used to illuminate an external lens. It contains a medium area, single wirebonded, GaAlAs 880 nm chip an...
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This 5 mm diameter plastic packaged emitter VTE1281F has no lens. It is designed to be coupled to plastic fibers or used to illuminate an external lens. It contains a medium area, single wirebonded, GaAlAs 880 nm chip an...
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This narrow beam angle 5 mm diameter plastic packaged emitter VTE1281-2 contains a medium area, single wirebonded, GaAlAs, 880 nm, high efficiency IRED chip. It is designed to be cost effective in moderate pulse drive ap...
Mfg:2000 Vendor:Other Category:Other
This narrow beam angle 5 mm diameter plastic packaged emitter VTE1281-1 contains a medium area, single wirebonded, GaAlAs, 880 nm, high efficiency IRED chip. It is designed to be cost effective in moderate pulse drive ap...
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This narrow beam angle 5 mm diameter plastic packaged emitter VTE1262 contains a large area, double wirebonded, GaAlAs, 880 nm, high efficiency IRED chip suitable for higher current pulse applications.
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This narrow beam angle 5 mm diameter plastic packaged emitter VTE1261 contains a large area, double wirebonded, GaAlAs, 880 nm, high efficiency IRED chip suitable for higher current pulse applications.
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This narrow beam angle TO-46 hermetic emitter VTE1163 contains a large area, double wirebonded, GaAlAs, 880 nm, high efficiency IRED chip suitable for higher current pulse applications.
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This narrow beam angle TO-46 hermetic emitter VTE1113(H) contains a large area, double wirebonded, GaAs, 940 nm IRED chip suitable for higher current pulse applications.
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This narrow beam angle TO-46 hermetic emitter VTE1113 contains a large area, double wirebonded, GaAs, 940 nm IRED chip suitable for higher current pulse applications.
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This wide beam angle TO-46 hermetic emitter VTE1063 contains a large area, double wirebonded, GaAlAs, 880 nm, high efficiency IRED chip suitable for higher current pulse applications.
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This wide beam angle TO-46 hermetic emitter VTE1013(H) contains a large area, double wirebonded, GaAs, 940 nm IRED chip suitable for higher current pulse applications.
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VTE1013 This wide beam angle TO-46 hermetic emitter contains a large area, double wirebonded, GaAs, 940 nm IRED chip suitable for higher current pulse applications.
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VTD34F Planar silicon photodiode in a molded plastic package. The package material filters out visible light but passes infrared. Suitable for direct mounting to P.C.B. Arrays can be formed by positioning these devices s...
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VTD34(H) Planar silicon photodiode in a transparent molded plastic package. Suitable for direct mounting to P.C.B. Arrays can be formed by positioning these devices side by side. These photodiodes are designed to provide...
Mfg:2000 Vendor:Other Category:Other
VTD34 Planar silicon photodiode in a transparent molded plastic package. Suitable for direct mounting to P.C.B. Arrays can be formed by positioning these devices side by side. These photodiodes are designed to provide ex...
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VTD31AA Planar silicon photodiode mounted on a two lead ceramic substrate and coated with a thick layer of clear epoxy. These diodes exhibit low dark current under reverse bias and fast speed of response.
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Vectron's VTD3 Temperature Compensated Crystal Oscillator (TCXO) is a quartz stabilized, CMOS squarewave, temperature compensated oscillator, operating off either 3.3 or 5.0 volt supply.
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VTD206K(H) Large area planar silicon photodiode in a waterclear, cast epoxy sidelooker, similar in outline to the TO-92 package. These diodes exhibit low dark current under reverse bias and fast speed of response.
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VTD206K Large area planar silicon photodiode in a waterclear, cast epoxy sidelooker, similar in outline to the TO-92 package. These diodes exhibit low dark current under reverse bias and fast speed of response.
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VTD206(H) Large area planar silicon photodiode in a cast epoxy sidelooker, similar in outline to the TO-92 package. The package material filters out all visible light but passes infrared. These diodes exhibit low dark cu...
Mfg:Perkinelmer D/C:06+ Vendor:Other Category:Other
VTD206 Large area planar silicon photodiode in a cast epoxy sidelooker, similar in outline to the TO-92 package. The package material filters out all visible light but passes infrared. These diodes exhibit low dark curre...
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VTD205K(H) Large area planar silicon photodiode in a waterclear, cast epoxy sidelooker, similar in outline to the TO-92 package. These diodes exhibit low dark current under reverse bias and fast speed of response.
Mfg:Perkinelmer D/C:06+ Vendor:Other Category:Other
VTD205K Large area planar silicon photodiode in a waterclear, cast epoxy sidelooker, similar in outline to the TO-92 package. These diodes exhibit low dark current under reverse bias and fast speed of response.
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VTD205(H) Large area planar silicon photodiode in a cast epoxy sidelooker, similar in outline to the TO-92 package. The package material filters out all visible light but passes infrared. These diodes exhibit low dark cu...
Mfg:Perkinelmer D/C:06+ Vendor:Other Category:Other
VTD205 Large area planar silicon photodiode in a cast epoxy sidelooker, similar in outline to the TO-92 package. The package material filters out all visible light but passes infrared. These diodes exhibit low dark curre...
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The VTC4-A33B-12M800 is designed as one kind of voltage controlled temperature compensated crystal oscillator with some features:(1)hermetically sealed ceramic SMD package;(2)gold over nickel contact pads;(3)optional VCX...
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The VTC4 series is designed as one kind of voltage controlled temperature compensated crystal oscillator with some features:(1)hermetically sealed ceramic SMD package;(2)gold over nickel contact pads;(3)optional VCXO fun...
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Vectron's VTC4 Temperature Compensated Crystal Oscillator (TCXO) is a quartz stabilized, clipped sine wave output, temperature compensated oscillator, operating off either 2.8, 3.0, 3.3 or 5.0 volt supply.
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Vectron's VTC2 Temperature Compensated Crystal Oscillator (TCXO) is a quartz stabilized, CMOS squarewave, temperature compensated oscillator, operating off either 2.8, 3.0, 3.3 or 5.0 volt supply.
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Mfg:SHARP D/C:05+ Vendor:Other Category:Other
The VTBT5UF201 is a combination tuner and demodulator in one package. VTBT5UF201 is compatible with North American NTSC television broadcast signals. An internal Phase-Locked Loop circuit performs all of the required tun...
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VTB9423B(H) Small area planar silicon photodiode in a recessed ceramic package. The package incorporates an infrared rejection filter. These diodes have very high shunt resistance and have good blue response.
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VTB9413B Small area planar silicon photodiode in a recessed ceramic package. The package incorporates an infrared rejection filter. These diodes have very high shunt resistance and have good blue response.
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VTB9413(H) Small area planar silicon photodiode in a recessed ceramic package. The chip is coated with a protective layer of clear epoxy. These diodes have very high shunt resistance and have good blue response.
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VTB9413 Small area planar silicon photodiode in a recessed ceramic package. The chip is coated with a protective layer of clear epoxy. These diodes have very high shunt resistance and have good blue response.
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VTB9412B(H) Small area planar silicon photodiode in a recessed ceramic package. The package incorporates an infrared rejection filter. These diodes have very high shunt resistance and have good blue response.
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VTB9412B Small area planar silicon photodiode in a recessed ceramic package. The package incorporates an infrared rejection filter. These diodes have very high shunt resistance and have good blue response.
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VTB9412(H) Small area planar silicon photodiode in a recessed ceramic package. The chip is coated with a protective layer of clear epoxy. These diodes have very high shunt resistance and have good blue response.
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VTB9412 Small area planar silicon photodiode in a recessed ceramic package. The chip is coated with a protective layer of clear epoxy. These diodes have very high shunt resistance and have good blue response.
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VTB8441B(H) Planar silicon photodiode in recessed ceramic package. The package incorporates an infrared rejection filter. These diodes have very high shunt resistance and have good blue response.
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VTB8441B Planar silicon photodiode in recessed ceramic package. The package incorporates an infrared rejection filter. These diodes have very high shunt resistance and have good blue response.
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VTB8441(H) Planar silicon photodiode in a recessed ceramic package. Chip is coated with a protective layer of epoxy. These diodes have very high shunt resistance and have good blue response.
Mfg:Perkinelmer D/C:06+ Vendor:Other Category:Other
VTB8441 Planar silicon photodiode in a recessed ceramic package. Chip is coated with a protective layer of epoxy. These diodes have very high shunt resistance and have good blue response.
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VTB8440B(H) Planar silicon photodiode in recessed ceramic package. The package incorporates an infrared rejection filter. These diodes have very high shunt resistance and have good blue response.
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VTB8440B Planar silicon photodiode in recessed ceramic package. The package incorporates an infrared rejection filter. These diodes have very high shunt resistance and have good blue response.
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VTB8440(H) Planar silicon photodiode in a recessed ceramic package. Chip is coated with a protective layer of epoxy. These diodes have very high shunt resistance and have good blue response.
Mfg:Perkinelmer D/C:06+ Vendor:Other Category:Other
VTB8440 Planar silicon photodiode in a recessed ceramic package. Chip is coated with a protective layer of epoxy. These diodes have very high shunt resistance and have good blue response.
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VTB8341 Planar silicon photodiode mounted on a two lead ceramic substrate and coated with a thick layer of clear epoxy. These diodes have very high shunt resistance and have good blue response.
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VTB6061UVJ Large area planar silicon photodiode in a three lead TO-8 package with a UV transmitting window. Chip is isolated from case. Third lead is grounded to case. These diodes have very high shunt resistance and hav...
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VTB6061UV Large area planar silicon photodiode in a dual lead TO-8 package with a UV transmitting "flat" window. Cathode is common to the case. These diodes have very high shunt resistance and have good blue response.
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VTB6061J Large area planar silicon photodiode in a "flat" window, three lead TO-8 package. Chip is isolated from case. The third lead allows case to be grounded. These diodes have very high shunt resistance and have good...
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VTB6061CIE Large area planar silicon photodiode in a "flat" window, dual lead TO-8 package. This photodiode is a spectrally modified VTB6061B with a spectral response closely resembling that of the human eye, making it a...
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VTB6061BH Large area planar silicon photodiode in a "flat" window, dual lead TO-8 package. The package incorporates an infrared rejection filter. Cathode is common to the case. These diodes have very high shunt resistanc...
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VTB6061B Large area planar silicon photodiode in a "flat" window, dual lead TO-8 package. The package incorporates an infrared rejection filter. Cathode is common to the case. These diodes have very high shunt resistance...
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VTB6061 Large area planar silicon photodiode in a "flat" window, dual lead TO-8 package. Cathode is common to the case. These diodes have very high shunt resistance and have good blue response.
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VTB5051UVJ Planar silicon photodiode in a three lead TO-5 package with a UV transmitting "flat" window. Chip is isolated from the case. The third lead allows case to be grounded. These diodes have very high shunt resista...
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VTB5051UV Planar silicon photodiode in a dual lead TO-5 package with a UV transmitting "flat" window. Chip is common to the case. These diodes have very high shunt resistance and have good blue response.
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VTB5051J Planar silicon photodiode in a "flat" window, three lead TO-5 package. Chip is isolated from the case. The third lead allows the case to be grounded. These diodes have very high shunt resistance and have good bl...
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VTB5051BH Planar silicon photodiode in a "flat" window, dual lead TO-5 package. The package incorporates an infrared rejection filter. Cathode is common to the case. These diodes have very high shunt resistance and have ...
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VTB5051B Planar silicon photodiode in a "flat" window, dual lead TO-5 package. The package incorporates an infrared rejection filter. Cathode is common to the case. These diodes have very high shunt resistance and have g...
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VTB5051 Planar silicon photodiode in a "flat" window, dual lead TO-5 package. Cathode is common to the case. These diodes have very high shunt resistance and have good blue response.
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The VTB5041 is desined as one kind of VTB process photodiodes. Planar silicon photodiode in a 'flat' window, dual lead TO-5 package. Cathode is common to the case. This diode has very high shunt resistance and good blue ...
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The VTB5040J is desined as one kind of VTB process photodiodes. Planar silicon photodiode in a 'flat' window, dual lead TO-5 package. Cathode is common to the case. This diode has very high shunt resistance and good blue...
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