Toshiba’s NAND flash memory with error-correcting code

Published:2012/3/28 21:13:00 Author:Ecco From:SeekIC

Toshiba has announced the NAND flash memory with embedded error correction code (ECC) which is a form of single-level cell.

The error correction NAND flash memory’s capacity is initially available in 4-Gbit and 8-Gbit. It is implemented in a 32-nm CMOS process technology. The error correction can be used to find and correct 4-bits in every 512-byte, which is four times higher than previous ECC schemes applied to NAND flash memory. The BENAND range offers package- and pin-compatibility with General SLC NAND flash memory. The ECC has been embedded in the host processor and corrected 1 bit per 512 bytes until now. However, diminishing process geometries increase the need for improved error correction. According to Toshiba, BENAND removes the burden of ECC from the host processor while minimizing protocol changes and allowing host processors to support leading-edge process NAND flash memory in a timely manner.

The BENAND memory is widely used in LCD television, digital cameras, robots and other industrial applications, home gateways, cable boxes, point-of-sale systems, smart meters, vending machines, in-flight entertainment systems and LCD advertising systems.

Samples of BENAND products are available now with TSOP and BGA packages, with mass production beginning March 2012.

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