Micron pushes TLC 128-Gbit NAND flash

Published:2013/2/17 3:19:00 Author:Ecco From:SeekIC

According to Micron Technology Inc., they have pushed a triple-level cell (TLC) 128-Gbit NAND flash memory in a 20-nm manufacturing process technology. And the company indicates that the technology is the world’s densest memory.

At 146 square millimeters the memory die is more than 25 percent smaller than the company’s same-capacity MLC NAND memory and it is intended for use in removable storage, including flash memory cards and USB drives. On the assumption of reasonable process yield a small die area results in more memories per wafer, lower costs for the manufacturer and lower prices for the buyer.

No details of the read or write performance, or the cycling endurance of the memory were provided by Micron in a press release but a paper is due to be presented on the 128-Gbit TLC NAND device at the upcoming International Solid-State Circuits Conference (ISSCC) on Feb. 19 at 3:15pm, in San Francisco, California.

Micron said that they expect removable storage to consume 35 percent of NAND memory in 2013. The 128-Gbit NAND is sampling with selected customers and will be in volume production in the second quarter of 2013.

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