Ramtron pushes low-energy FRAM FM25e64 at DESIGN West

Published:2012/4/4 20:16:00 Author:Ecco From:SeekIC

Ramtron International Corp. pushed a low-energy ferroelectric random access memory (FRAM) at the DESIGN West. According to Ramtron, their memory technology inherently provides fast single-cycle and symmetrical read/write speeds, high endurance, low power consumption and gamma radiation tolerance and electromagnetic immunity.

The FM25e64 expands Ramtron’s capability to improve energy efficiency, access speed and security in customers’ products. The FM25e64 natively operates on 1.5- or 1.8-volt power rails and offers low 20-microamps active current operation. However, it only requires about 20-microseconds to start up, write data and shut down the memory. The FM25e64 achieves levels of power consumption that are not possible with older nonvolatile memory technologies, such as electrically erasable programmable read-only memory (EEPROM). What’s more, the FM25e64 allows engineers to control the element time in the energy consumption equation with fast access speed and high frequency write capabilities to improve system performance with negligible energy consumption.

Now, Ramtron only supports the samples of FM25e64. And the mass production of the FM25e64 is expected later.

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