ST develops 28-nm, 20-nm FDSOI with GlobalFoundries

Published:2012/6/11 21:32:00 Author:Ecco From:SeekIC

Chip vendor STMicroelectronics NV has announced that it can produce the devices using 28-nm and 20-nm fully depleted silicon-on-insulator (FDSOI) technology by signing up with GlobalFoundries. As a part of the same deal, ST is opening up the FDSOI process to make GlobalFoundries offer the process to other customers.

ST has developed the FDSOI process with the help from its partners including Grenoble research institute Leti, SOI wafer maker Soitec and IBM. ST has increased FDSOI sourcing capacity by adding GlobalFoundries to its own pilot line capability at Crolles, France. ST indicates that the "high-volume" availability of products in its proprietary FDSOI manufacturing process would help it produce higher performance, lower power mobile devices.

The 28-nm FDSOI's sample will be available in July 2012 while 20-nm FDSOI is under development and is scheduled to be ready for prototyping by 3Q13. FDSOI can be used either for high performance or for low leakage current by biasing the substrate, and this can be done dynamically.

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