Features: •Broadband internal matching•Typical EDGE performance- Average output power = 45 W- Gain = 18 dB- Efficiency = 40%•Typical CW performance- Output power at P1dB = 120 W- Gain = 17 dB- Efficiency = 60%•Integrated ESD protection: Human Body Model, Class 1 (minimum)...
08090: Features: •Broadband internal matching•Typical EDGE performance- Average output power = 45 W- Gain = 18 dB- Efficiency = 40%•Typical CW performance- Output power at P1dB = 120 W- G...
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Parameter |
Symbol |
Value |
Unit |
DrainSource Voltage |
VDSS |
65 |
V |
GateSource Voltage |
VGS |
0.5 to +12 |
V |
Junction Temperature |
TJ |
200 |
°C |
Total Device Dissipation Above 25°C derate by |
PD |
335 1.9 |
W W/°C |
|
TSTG |
40 to +150 |
°C |
Thermal Resistance (TCASE = 70°C) |
RqJC |
0.52 |
°C/W |
The PTF080901 is a 90 W, internally matched GOLDMOS FET intendedfor EDGE and CDMA applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability.