1517-110M Selling Leads, Price trend, 1517-110M DataSheet download, circuit diagram from SeekIC.com

SpecificationsDevice Dissipation @251 350 WMaximum Voltage and CurrentCollector to Base Voltage (BVCES) 70 VEmitter to Base Voltage (BVEBO) 3 VCollector Current (IC) 9 AMaximum TemperaturesStorage Temperature -65 to +200Operating Junction Temperature +200DescriptionThe 1517-110M is an internally ...

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SeekIC No. : 004210268 Detail

1517-110M: SpecificationsDevice Dissipation @251 350 WMaximum Voltage and CurrentCollector to Base Voltage (BVCES) 70 VEmitter to Base Voltage (BVEBO) 3 VCollector Current (IC) 9 AMaximum TemperaturesStorage ...

1517-110M Data Sheet

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Part Number:: 1517-110M
Supply Ability:: 5000

Price Break

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1~5000

Unit Price
Negotiable

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15 Days

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Product Details

Description

Specifications

Device Dissipation @25¹           350 W
Maximum Voltage and Current
Collector to Base Voltage (BV_CES) 70 V
Emitter to Base Voltage (BV_EBO)    3 V
Collector Current (I_C)                      9 A
Maximum Temperatures
Storage Temperature                   -65 to +200
Operating Junction Temperature +200

Description

The 1517-110M is an internally matched, COMMON BASE transistor capable of providing 110 Watts of pulsed RF output power at 200 microseconds pulse width, 10% duty factor across the band 1480 to 1650 MHz. This hermetically solder-sealed transistor is specifically designed for upper L-Band radar applications. The 1517-110M utilizes gold metallization and diffused emitter ballasting to provide high reliability and supreme ruggedness.

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1517-110M

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