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16TTS12SPbF

Features: The 16TTS..SPbF High Voltage Series of silicon controlled rectifiers are specifically designed for medium power switching and phase control applications. The glass passivation technology used has reliable operation up to 125 junction temperature.Typical applications are in input rectific...

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SeekIC No. : 004211099 Detail

16TTS12SPbF: Features: The 16TTS..SPbF High Voltage Series of silicon controlled rectifiers are specifically designed for medium power switching and phase control applications. The glass passivation technology u...

16TTS12SPbF Data Sheet

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Part Number:
16TTS12SPbF
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

The 16TTS..SPbF High Voltage Series of silicon controlled rectifiers are specifically designed for medium power switching and phase control applications. The glass passivation technology used has reliable operation up to 125 junction temperature.

Typical applications are in input rectification (soft start) and these products are designed to be used with Vishay HPP input diodes, switches and output rectifiers which are
available in identical package outlines.

This product has been designed and qualified for industrial level and lead (Pb)-free ("PbF" suffix).






Specifications

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
TYP. MAX.
Maximum average on-state current IT(AV) TC = 93 , 180° conduction, half sine wave 10 A
Maximum RMS on-state current IRMS 16
Maximum peak, one-cycle,
non-repetitive surge current		 ITSM 10 ms sine pulse, rated VRRM applied 170
10 ms sine pulse, no voltage reapplied 200
Maximum I2t for fusing I2t 10 ms sine pulse, rated VRRM applied 144 A2s
10 ms sine pulse, no voltage reapplied 200
Maximum I2t for fusing I2t t = 0.1 to 10 ms, no voltage reapplied 2000 A2s
Maximum on-state voltage drop VTM 16 A, TJ = 25 1.4 V
On-state slope resistance rt TJ = 125 24.0 m
Threshold voltage VT(TO) 1.1 V
Maximum reverse and direct leakage current IRM/IDM TJ = 25 VR = Rated VRRM/VDRM 0.5 mA
TJ = 125 10
Holding current IH Anode supply = 6 V, resistive load, initial IT = 1 A - 100
Maximum latching current IL Anode supply = 6 V, resistive load 200
Maximum rate of rise of off-state voltage dV/dt 500 V/µs
Maximum rate of rise of turned-on current dI/dt 150 A/µs





Description

Surface Mountable Phase Control SCR 16TTS12SPbF, 16 A




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