1DI200Z-100E04

The 1DI200Z-100E04 is designed as power transistor module. Its typical applications include power switching, AC motor controls, DC controls and uninterruptible power supply.

1DI200Z-100E04 has four features. (1) It would have high voltage. (2) It would include free wheeling diode. (3) It would have excellent safe operating area. (4) Its would be insulated type. That are all the main features.

Some absolute maximum ratings of 1DI200Z-100E04 have been concluded into several points as follow. (1) Its collector to base voltage would be 1000V. (2) Its collector to emitter voltage would be 1000V. (3) Its emitter to base voltage would be 10V. (5) Its collector current would be 200A for DC and would be 400A for 1ms. (6) Its base current would be 12A for DC and would be 24A for 1ms. (7) Its collector power dissipation would be 1400W. (8) Its junction temperature would be +150°C. (9) Its storage temperature range would be from -40°C to +125°C. It should be stressing above those listed in the "absolute maximum ratings" may cause permanent damage to device.

Also some electrical characteristics about 1DI200Z-100E04. (1) Its collector to base voltage would be min 1000V with condition of Icbo=4mA. (2) Its collector to emitter voltage would be min 1000V with condition of Ic=4mA. (3) Its emitter to base voltage would be min 10V with condition of Iebo=800mA. (4) Its collector cutoff current would be max 4.0mA with condition of Vcbo=1000V. (5) Its emitter cutoff current would be max 200mA with condition of Vebo=10V. (6) Its DC current gain would be min 100 with condition of Ic=200A and Vce=5V. (7) Its collector to emitter saturation voltage would be max 2.8V. (8) Its base to emitter saturation voltage would be max 3.5V. And so on. If you have any question or suggestion or want to know more information please contact us for details. Thank you!