1MBI200N-120

The 1MBI200N-120 is a type of IGBT module,features of the 1MBI200N-120 are:(1)square RBSOA;(2)low saturation voltage;(3)less total power dissipation;(4)improved FWD characteristic;(5)minimized internal stray inductance;(6)ove rcurrent limiting function (4~5 times rated current).

The absolute maximum ratings and electrical characteristics(Tj=25°C) of the 1MBI200N-120 can be summarized as:(1):collector-emitter voltage is 1200 V;(2):gate -emitter voltage is ±20 V;(3):continuous(continuous) is 200A,contin uous(1ms) is 400A;(4):max. power dissipation is 1500 W; (5):operating temperature is +150°C;(6):stor age temp erature is-40 °C+125°C;(7):isolation voltage(AC 1min) is 2500 V.Electrical characteristics:(1):zero gate voltage coll ector current is 4.0mA max when VGE is 0V and VCE is 1200V;(2):gate-emitter leackage current is 60uA max when VCE is 0V and VGE is±20V;(3):collector-emitter saturation voltage is 3.3V max when VGE is 15V and IC is 200A;(4): diode forward on-voltage is 3.0 V max when IF is 200A and VGE is 0V;(5): reverse recovery time is 350 ns max when IF is 200A ;(6)reverse transfer capacitance is 10320pF when f is 1MHz.

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