1N4000 series

      On the Reliability of Silicon Rectifier Diodes above the Maximum Permissible Operation Junction Temperature.
      Technology development of a high-power large-area mesa diode is described. For achieving the high reverse blocking capability, a shallow gradient deep Ga/Al impurity diffusion profile has been used in conjunction with surface electric field control.A positively-bevelled Mo-Si alloyed edge-contoured structure passivated by a high dielectric strength rubber, helped in realising the 4.4 kV diode. The behaviour of the reverse voltage-current characteristics of the diode has been studied at room temperature (25 ) and elevated temperature (150 ). The leakage current was 10 A at 4.4 kV at 25 and increased to 50 mA (maximum) at 4kV at 150 . The variation of leakage current with process stages has been monitored. Influence of high voltage surface passivation on leakage current has also been investigated. Fabrication of the power diode needs stringent control of minority-carrier lifetime to reduce the forward voltage drop and reverse leakage current. High minority-carrier lifetime of20-30 sec has resulted in a low forward drop of 1.6 V (at a current level of 1800 A). Based on carrier lifetime measurements on developed diodes, leakage current calculations have been carried out as a function of applied voltage and temperature.The studies have revealed the contribution of various bulk and surface effects detrimental to the leakage current in the light of which crucial processes for realising a minimally leaky device have been discussed. Critical process steps are simplified and standardised to enhance the reliability and yield. Problems encountered in device development are highlighted and successfully solved. The design aspects and experimental results on fabricated diodes are reported.
      The diodes can be delivered with limited forward voltage and reverse current differences for parallel connecting in rectifier stacks and back-off-diodes.
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