1N4001-G

Series: -
Diode Type: Standard
Current - Average Rectified (Io) (per Diode): -
Diode Configuration: -
Mounting Type: Through Hole
Packaging: Cut Tape (CT)Alternate Packaging
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Package / Case: DO-204AL, DO-41, Axial
Current - Reverse Leakage @ Vr: 5µA @ 50V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Manufacturer: Comchip Technology
Supplier Device Package: DO-41


Features:

· Low forward voltage drop
· High current capability
· Low reverse leakage current
· High surge current capability


Specifications

	SYMBOL	1N 4001-G	1N 4002-G	1N 4003-G	1N 4004-G	1N 4005-G	1N 4006-G	1N 4007-G	UNITS
Maximum repetitive peak reverse voltage	VRRM	50	100	200	400	600	800	1000	V
Maximum RMS voltage	VRMS	35	70	140	280	420	560	700	V
Maximum DC blocking voltage	VDC	50	100	200	400	600	800	1000	V
Maximum average forward rectified current TL = 55°C	IF (AV)	1.0							A
Peak forward surge current, 8.3ms single half sine-wave superimposed on rated load (JEDEC Method)	IFSM	30							A
Maximum instantaneous forward voltage @ 1.0A	VF	1.1							V
Maximum DC reverse current @ TJ= 25°C At Rated DC blocking voltage @ TJ= 125°C	IR	5.0 250							uA
Typical junction capacitance (Note 1)	CJ	10							pF
Typical thermal resistance (Note 2)	RJA	45							ºC/W
Operating junction and storage temperature Range	TJ,TSTG	-55 to +125							ºC

(1)Thermal resistance junction to lead.
(2) Measured at 1.0MHz and applied reverse voltage of 4.0 Volts DC.