1N5187US

Features: • Surface mount equivalent to the popular JEDEC registered 1N5186 to 1N5190 series• Voidless hermetically sealed glass package• Triple-Layer Passivation• Internal Category I Metallurgical bonds• Working Peak Reverse Voltage 100 to 600 Volts.• Further...

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1N5187US: Features: • Surface mount equivalent to the popular JEDEC registered 1N5186 to 1N5190 series• Voidless hermetically sealed glass package• Triple-Layer Passivation• Internal ...

floor Price/Ceiling Price

Part Number:
1N5187US
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/17

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Product Details

Description



Features:

• Surface mount equivalent to the popular JEDEC registered 1N5186 to 1N5190 series
• Voidless hermetically sealed glass package
• Triple-Layer Passivation
• Internal "Category I" Metallurgical bonds
• Working Peak Reverse Voltage 100 to 600 Volts.
• Further options in screening in accordance with MIL-PRF-19500/424 for JAN, JANTX, and JANTXV by adding a MQ, MX, or MV prefix respectively, e.g. MX1N5186US, MV1N5187US, etc.
• Axial-leaded package equivalents also available (see separate data sheet for 1N5186 thru 1N5190)



Application

• Fast recovery 3 Amp rectifiers 100 to 600 V
• Military and other high-reliability applications
• General rectifier applications including bridges, half-bridges, catch diodes, etc.
• High forward surge current capability
• Extremely robust construction
• Low thermal resistance
• Controlled avalanche with peak reverse power capability
• Inherently radiation hard as described in Microsemi MicroNote 050



Specifications

• Junction & Storage Temperature: -65 to +175
• Thermal Resistance: 10/W junction to end cap
• Thermal Impedance: 1.5/W @ 10 ms heating time
• Average Rectified Forward Current (IO): 3.0 Amps @ TA = 25 and 0.700 Amps at TA = 150
• Forward Surge Current: 80 Amps @ 8.3 ms half-sine
• Solder Temperatures: 260 for 10 s (maximum)



Description

This "fast recovery" rectifier diode 1N5187US series is ideal for high-reliability applications where a failure cannot be tolerated. These industry-recognized 3.0 Amp rated rectifiers 1N5187US  for working peak reverse voltages from 100 to 600 volts are hermetically sealed with voidless-glass construction using an internal "Category I" metallurgical bond. These devices 1N5187US are also available in military qualified axial-leaded packages by deleting the "US" suffix. Microsemi also offers numerous other rectifier products to meet higher and lower current ratings with various recovery time speed requirements including fast and ultrafast device types in both through-hole and surface mount packages.




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