1N5819

Schottky (Diodes & Rectifiers) Schottky Barrier

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SeekIC No. : 00185016 Detail

1N5819: Schottky (Diodes & Rectifiers) Schottky Barrier

floor Price/Ceiling Price

US $ .04~.07 / Piece | Get Latest Price
Part Number:
1N5819
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $.07
  • $.05
  • $.05
  • $.04
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/4/26

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Product Details

Quick Details

Product : Schottky Rectifiers Peak Reverse Voltage : 40 V
Forward Continuous Current : 1 A Max Surge Current : 25 A
Configuration : Single Forward Voltage Drop : 0.6 V
Maximum Reverse Leakage Current : 500 uA Operating Temperature Range : - 65 C to + 125 C
Mounting Style : Through Hole Package / Case : DO-41
Packaging : Reel    

Description

Recovery Time :
Maximum Power Dissipation :
Mounting Style : Through Hole
Configuration : Single
Packaging : Reel
Product : Schottky Rectifiers
Maximum Reverse Leakage Current : 500 uA
Forward Continuous Current : 1 A
Max Surge Current : 25 A
Peak Reverse Voltage : 40 V
Operating Temperature Range : - 65 C to + 125 C
Package / Case : DO-41
Forward Voltage Drop : 0.6 V


Features:

•Schottky Barrier Chip
•Guard Ring Die Construction for Transient Protection
•High Current Capability
•Low Power Loss, High Efficiency
•High Surge Current Capability
•For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Applications





Specifications

Product Type Schottky
Part Number 1N5819
Max Average Rectified Current IO (A) 1
@ Terminal Temperature TT (oC) 90
Peak Repetitive Reverse Voltage VRRM (V) 40
Peak Forward Surge Current IFSM (A) 25
Forward Voltage Drop VF (V) 0.9
@ IF (A) 3
Max Reverse Current IR (mA) 10
@ VR (V) 100
Total Capacitance CT (pF) 110




Product Product status Eco Status Pricing* Package type Leads Packing method Package Drawing
1N5819 Full Production RoHS Compliant $0.077 DO-41 2 TAPE REEL TBD
* Fairchild 1,000 piece Budgetary Pricing
** A sample button will appear if the part is available through Fairchild's on-line samples program. If there is no sample button, please contact a Fairchild distributor to obtain samples


Characteristic Symbol 1N5817 1N5818 1N5819 Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
20 30 40 V
RMS Reverse Voltage VR(RMS) 14 21 28 V
Average Rectified Output Current (Note 1) @TL = 90°C IO 1.0 A
Non-Repetitive Peak Forward Surge Current 8.3ms
Single half sine-wave superimposed on rated load
(JEDEC Method)
IFSM 25 A
Forward Voltage @IF = 1.0A
@IF = 3.0A
VFM 0.450
0.750
0.550
0.875
0.60
0.90
V
Peak Reverse Current @TA = 25°C
At Rated DC Blocking Voltage @TA = 100°C
IRM 1.0
10
mA
Typical Junction Capacitance (Note 2) Cj 110 pF
Typical Thermal Resistance Junction to Lead (Note 1) RQJL 15 °C/W
Operating and Storage Temperature Range Tj, TSTG -65 to +150 °C





Description

The 1N5819 is a vishay liteon power semiconductor.Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment.It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs).

Features of the 1N5819 are:(1)schottky barrier chip; (2)guard ring die construction for transient protection; (3)high surge capability; (4)low power loss, high efficiency; (5)for use in low voltage, high frequency inverters,free wheeling, and polarity protection application; (6)high current capability and low forward voltage drop; (7)plastic material has UL flammability classification 94V0.

The absolute maximum ratings of the 1N5819 can be summarized as:(1)junction temperature range:-65 to 150;(2)storage temperature range:-65 to 150;(3)peak forward surge current:25 A;(4)average forward current:1A;(5)The repetitive peak reverse voltage of the 1N5819: 20V.The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest version of the datasheet(s).In cases where extremely high reliability of the 1N5819 is required (such as use in nuclear power control, aerospace and aviation, traffic equipment,medical equipment, and safety equipment), safety should be ensured by using semiconductor device of the 1N5819 that feature assured safety or by means of users' fail-safe precautions or other arrangement.In no event shall Sensitron Semiconductor be liable for any damages that may result from an accident or any other cause during operation of the user's units according to the datasheet(s). Sensitron Semiconductor assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in the datasheets.

At present there is not too much information about this model.If you are willing to find more about 1N5819, please pay attention to our web! We will promptly update the relevant information.






Parameters:

Technical/Catalog Information1N5819
VendorSTMicroelectronics (VA)
CategoryDiscrete Semiconductor Products
Diode Type Schottky
Voltage - DC Reverse (Vr) (Max)40V
Current - Average Rectified (Io)1A
Voltage - Forward (Vf) (Max) @ If550mV @ 1A
Reverse Recovery Time (trr)-
Current - Reverse Leakage @ Vr500A @ 40V
SpeedFast Recovery =< 500ns, > 200mA (Io)
Mounting TypeThrough Hole, Axial
Package / CaseDO-41, Axial
PackagingCut Tape (CT)
Capacitance @ Vr, F-
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names 1N5819
1N5819
497 6610 1 ND
49766101ND
497-6610-1



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